Vapor phase epitaxy - Globe Thesis

Keyword [Vapor phase epitaxy] Result: 1 - 20 \| Page: 1 of 2
1.	In Situ Synthesis And Photoelectric Performance Of Low-Dimensional Antimony Chalcogenides And Heterostructures
2.	Van Der Waals Epitaxial Growth Of Two-Dimensional Perylene-3,4,9,10-tetracarboxylic Dianhydride
3.	Study On Gas-Phase Reaction And Reactor Optimization In GaN HVPE Growth
4.	Ferromagnetism in manganese doped indium antimonide semiconductor thin films grown by metalorganic vapor phase epitaxy
5.	Crystal growth and properties of indium phosphide nanowires
6.	Metal organic vapor phase epitaxy growth and electrical characterization of high-resistivity and lattice-mismatched indium-arsenic-phosphorus and aluminum-indium-arsenic-phosphorus buffer layers for indium arsenide and indium phosphide device application
7.	Hydride vapor phase epitaxy of semipolar gallium nitride
8.	Growth of gallium nitride and indium nitride films and nanostructured materials by hydride-metalorganic vapor phase epitaxy
9.	Metalorganic vapor-phase epitaxy of indium phosphide and related materials
10.	m-Plane Homoepitaxy and Equilibrium Crystal Shapes of Gallium Nitride by Hydride Vapor Phase Epitaxy
11.	The chemistry and surface microstructure of silicon-based substrates and their effect on the evolution of the microstructures of III-nitride films grown via metalorganic vapor phase epitaxy
12.	Growth and Characterization of (211)B Cadmium Telluride Buffer Layer Grown by Metal-organic Vapor Phase Epitaxy on Nanopatterned Silicon for Mercury Cadmium Telluride Based Infrared Detector Applications
13.	Sapphire surface preparation and gallium nitride nucleation by hydride vapor phase epitaxy
14.	Engineering of compound semiconductor nanostructures by metalorganic vapor-phase epitaxy
15.	Growth and characterization of zinc oxide thin films produced by metalorganic vapor phase epitaxy
16.	Lateral epitaxial growth techniques for gallium nitride thin films on 6H-silicon carbide(0001) substrates via metalorganic vapor phase epitaxy
17.	Surfactants control of surface process in gallium indium phosphide and gallium arsenide epitaxial layers grown by organometallic vapor phase epitaxy
18.	The effects of the surfactant antimony on ordering and phase separation in gallium-indium-phosphide grown by organometallic vapor phase epitaxy
19.	Surface and interface structure formation in III-V compound semiconductors grown by metal-organic vapor phase epitaxy
20.	Growth via low pressure metalorganic vapor phase epitaxy and characterization of gallium nitride and indium gallium nitride thin films
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