Numerical Methods And Analysis For The Semiconductor Device Simulation With Heat Conduction

With the development of the modern technology, the work on the semiconductor device simulation is very important for the solution of the semiconductor problem. The work has deeply influenced the development of society and has been producing great benefits to the economy. In this dissertation, we consider the following semiconductor problem[1-5]:Among the four equations, the first is an elliptic type equation for the electric potential; the second and the third are convection-dominated diffusion type equations for the electron concentration equation and the hole concentration equation; the last one is the temperature equation with heat conduction. The unknown functions here are {ψ,e,p, T}. The four equations with initial condition and boundary condition make up a closed system. Here α = q/ε, q and ε are both positive constants, respectively representing the electron charge and the dielectric permittivities. Ds(x) (s = e, p) is diffusion coefficient and μ_s(x) (s = e, p) is mobilities with the relation D_s(x) = UTμ_s(x), here U_T is the thermal voltage. N(x) = N_D(x) - N_A(x) is a given function. N_D(x) and N_A(x) are the donor and the acceptor impurity concentrations. And N(x) changes very...