| In this article, the electrochemical behavour , polishing rate , CMP process mechanism and so on during CMP have been first investigated systematicly hi instruction of principles of solution chemistry ,corrsion electrochemistry, friction and wear, and fluid boundary layer of hydrodynamics by rotate disk electrode of electrochemical experimental methods. The main contents researched and conclusions are as follows:Self-corrosion behavior of copper in HN03, NH3籋2O, or CH3NH2 media and conditions of self-passivation of copper when K3[Fe(CN)e], BTA,or Na3PC*4 as passivators have been firstly studied systematicly by polarization curve and AC impedance technologies. Self-corrosion and self-passivation behavior of copper,dependence of that on film assistors in NaOH-NaAc solution have been investigated. The feasible forming film recipes of self-passivation have been found as follows:Forming inorganic passivation film0.1%CH3NH2+0.5%K3[Fe(CN)6] 0.1%NH3 H2O+1% K3[Fe(CN)6] 0.5%HNO3+3%Na3PO4 12H2OForming organic passivation film1% HNO3+1%BTA+0.2%H2O2Forming oxide passivation filmHNNpH8.5+0.2mol/lKClO3 HNNpH8.5+0.2mol/l KNO3The values state of elements in passivation film were analyzed by XPS and film constitutes have been concluded that:Main constitutes of passivation film on the surface of copper in NH3 H2O and CH3NH2 media containing K3[Fe(CN)6] is Cu4[Fe(CN)6];Main constitutes of passivation film on the surface of copper in HNO3 media containing Na3PO4 is Cu3(PO4)2;Main constitutes of passivation film on the surface of copper in HNO3 media containing BTA is mixture of Cu( I) -BTA and Cu( II) -BTA;Main constitutes of passivation film on the surface of copper in NaOH-NaAc solution is Cu2O.Relations of corrosion potential and corrosion current density varying with polishing pressure and rotative rate were studied during CMP. Corrosion potentialdroped when forcing and rised when withdrawing preaaure for anode-type of passivator ,and it reversed for cathode-type of passivator. We discovered that corrosion current density varied with polishing pressure and rotative rate basiclly linearly to some extent. The curve slopes of variation of corrosion potential with time could explain comparative rate of formation and removing of film and throwing extension of polishing pressure and rotative rate.Formation processes of passivation film were proved to accord with Muller model according to variation of apex current and apex potential with scan rate of potential by circle volt-ampere method of linear potential scan in various CMP recipe. The rules of variation of corrosion current density with rotative rate of wafer were discovered.Polishing rate and it's dependences in various recipe were investigated and the rules of dependence of polishing rate on constitutes concentration,abrasives sizes and rigidity were studied during CMP. The CMP recipe theory(characteristic concentration theory) and a viewpoint "hat there was a characteristic concentration Cmax for component's concentration in CMP recipe where polishing rate was maximal were put forward firstly.Linear relation of polishing rate with corrosion currnet density under some conditions was discovered during CMP and the quantitative polshing rate equation was established. A new model-catalystc corrosion model explaining CMP process mechanism was suggested.Polishing effect was illuminated comparatively by profile curves and SEM pictures. A viewpoint that CMP recipe mainly acted as controlling formation of self-passivation film and polishing rate, and final planarization ra was mainly dependent on the characteristic of abrasives and polishing pad ,and rmax and rz on monodispersion of abrasive sizes, was put forward for the first time. The global planarization can't be got by a simple combination of chemical and mechanical polishing.By above researches the feasible CMP recipes have been found finally as follows:CMP recipe of forming inorganic p.issivation film is that1) Recipe of oxidation-type of passivator: 1%NH3 H2O+25%Y-A1203 +4%K:iFe(CN)6; poli...
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