| Wide-band semiconductors and high-K dielectrics are two of the cutting-edge research focuses in microelectronics industry. SiC has been attracting great attention as a kernel material among wide-band semiconductors because of its excellent properties. However, the expensive price and fabricating difficulty of bulk materials embarrassed the widespread application of SiC-based devices. Scientists have proposed a series of solutions, among which ion implantation technology was considered as potential since it was beyond the limit of thermodynamic equilibrium, and could precisely control implantation dose and buried layer thickness. On the other hand, when silicon-based integrated circuit is scaled into sub-micron, deep sub-micron regime, the thickness of conventional SiO2 dielectrics rapidly scaled down to its physical limit. The search for suitable high-K materials to replace SiO2 is a promising solution to overcome direct tunneling current problem.In this work, an EATON-Z200 large beam-current system without ion mass analyzer and conventional beam-line ULVAC ion implanter were adopted to realize carbon ion implantation into p-Si (100) wafers. Substrates were kept at about 700 ℃ with the combination of ion beam and external heating during implantation. Post-implantation annealing at 1250℃ in argon for 5h were done for some samples. Infrared reflection spectroscopy (IRRS), glanced angle x-ray diffraction (GAXRD), transmission electron microscope (TEM) analysis results showed that Si/SiC/Si structures were obtained successfully, and the buried layer was composed of amorphous SiC particles before annealing. After annealing, SiC crystalline quality was improved and became polycrystalline states. The selection of implantation energy and dose was not arbitrary. The buried layer thickness reduced since carbon ions shifted to high concentration centre zone after annealing treatment.The most obvious difference between two implantation methods consists in two...
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