Font Size: a A A

Theoretical Study On Electronic And Optical Properties Of Modified Doped Ag2S And Carbon-based Nanomaterials

Posted on:2021-01-09Degree:DoctorType:Dissertation
Country:ChinaCandidate:C Y DuFull Text:PDF
GTID:1361330620978518Subject:Theoretical Physics
Abstract/Summary:PDF Full Text Request
Ag2S,a typical narrow band gap semiconductor exhibiting smaller band gap,nontoxic as well as cytocompatibility,is considered to be used in biomedical imaging,near-infrared emission,high-efficiency solar energy conversion and photocatalytic applications.In order to improve photocatalytic activity and optical properties of Ag2S,we have studied the electronic and optical properties of Ag2S by intrinsic defects,doping concentration and metal doping,respectively.On the other hand,carbon based nanomaterials,especially zero dimensional fullerene and two-dimensional graphene,have unique structure and electronic properties.In order to enrich their physical and chemical properties,we have investigated C60 fullerene and graphene,respectively,by using foreign elements modification and further studied their physical properties.The main research results of this paper are as follows:First,by using first-principles calculations,we study the formation energy and electronic properties of Ag2S with Ag_I vacancy defect(VAgI),Ag_II vacancy defect(VAgII)and S vacancy defect(VS),respectively.We simulated the structures model of non-stoichiometric Ag2S measured from experiment,the Ag-Ag bond length from our calculation exhibit similar results as observed in experiment.VAg vacancy defects in Ag2S are intrinsic vacancy defects,introduction of VAg into crystalline Ag2S results in the increase of conductivity.High conductivity p-type materials can be obtained by control concentration of intrinsic defects into Ag2S crystals.Second,using first-principles calculations based on density functional theory(DFT),electronic structure properties of Cu substitution of Ag_I(Cu AgI),Cu substitution of Ag_II(Cu AgII),and interstitial Cu(Cui)doped Ag2S with different doping concentrations were investigated.With the increase of doping concentration,the band gap of Cu AgI and Cu AgIIsystem is almost unchanged,while the band gap reduction for Cui system can mainly be attributed to the downward shift of the d orbitals of Cu atom.The consistency between band gap reduction from first-principles calculations and the red-shift from experimental spectra suggests the doped Cu atom is located at interstitial site in Ag2S.And than,we studied electronic properties of different kinds of metal doping Ag2S crystal by using first-principle calculations.Results shows than the binding energy of substitution doping is significantly lower than that of interstitial doping.Interstitial doping results in obvious deformation of Ag2S lattice.In addition to the metal substitution doping with s1 electron configuration,other metal doping and interstitial doping with s1 electron configuration have a great influence on the band structure of Ag2S crystal.The gap states in forbidden area of Ag2S crystal is mainly originated from doping atoms.d-electron metal doping induces magnetism in Ag2S crystal.Finally,we have studied the C60 fullerene and graphene by using foreign elements modification,respectively.Three types of geometries are used to study the properties of semiconductor decorated graphene:partially decorated graphene with one element;fully decorated graphene with different elements;partially decorated graphene with different elements.The calculation results show that the decorated patches donate electrons to graphene layer,causes the electrostatic potential lower in the decorated graphene areas,thus induced an electric field across the boundary between the decorated and non-decorated domains.Therefore,we propose a new mechanism of mass transport on graphene surface,which plays an important role in understanding the selective diffusion and nucleation of adsorbed atoms on graphene surface.Besides,we calculated the electronic and optical properties of endohedral Au clusters fullerenes by using hybrid density functional theory.The energy stability of ground state Au clusters,non ground state Au clusters and(Au)1~6@C60 is compared.Binding energy of(Au)1~6@C60 complex increases with the increase of the number of Au atom.Interaction energy and charge transfer analysis show strong covalent interaction between Au clusters and C60 cage.Magnetic moment exhibits even-odd oscillatory for(Au)1~6@C60 complexes.Au clusters breaks the macroscopic symmetry of C60 cage and the optical properties of(Au)1~6@C60complex are anisotropic.Spectral intensity of C60 in the ultraviolet region decreases and spectral amplitude of Au clusters in the infrared region increases along with the increase of the number of Au atoms.There are new peaks in the UV region,which mainly attributed to the interaction between Au clusters and C60.Intensity of these peaks increases with the number of Au atoms increase.
Keywords/Search Tags:First-principles, Graphene, Ag2S Semiconductor, Intrinsic Defect, Electronic Properties, Optical Properties
PDF Full Text Request
Related items