| This dissertation documents the use of hydrogen for controlling electrical and magnetic properties of ferromagnetic semiconductors, particularly GaMnAs. With minimal structural perturbation, hydrogen forms complexes with Mn acceptors and renders them neutral, thereby substantially increasing electrical resistivity and removing ferromagnetism. A major finding presented herein is that laser annealing can be used to controllably dissociate the Mn-H complexes and restore ferromagnetism. Structural, electrical, and magnetic effects of the laser activation process are thoroughly explored through experiments and numerical modeling. Local laser activation with tightly-focused ultra-short laser pulses allows for high-resolution direct-writing of ferromagnetic patterns in semiconductors, introducing a new paradigm for device design. Prospects for laser formation of high-temperature phases in ferromagnetic semiconductors are investigated. Finally, several device concepts incorporating the laser activation process are discussed as building blocks towards planar all-semiconductor spintronics. |
