The diffusion of phosphorus into diamond from phosphorus-doped silicon through field enhanced diffusion by optical activation

Field Enhanced Diffusion with Optical Activation (FEDOA), a process developed by Dr. Mark A. Prelas and his co-researchers, was utilized in developing n-type and p-type semiconductors based on diamond films. Diamond-based semiconductors are expected to greatly improve the performance of radiation detectors, largely owing to the excellent physical properties of diamond.; This dissertation work presents the work done on doping diamond with phosphorus in three different phases. Each phase used a different dopant carrier: phase I used phosphorus pentasulfide, phase II used red phosphorus, and phase III used gallium phosphate. More focus is being done on phase II, which has yielded the most promising results among the three phases. Phase II used silicon wafer as an indirect doping substrate.; An IN plot was taken on each sample before and after FEDOA to assess its electrical properties. The Scanning Electron Microscopy (SEM) and Laser Ablation Inductively Coupled Plasma Mass Spectrometry (LA-ICP-MS) analytical techniques were used to the measure the dopant concentration at different depths. An Atomic Force Microscopy (AFM) scan was used to map the surface of the undoped and the doped diamond films.; Based on the results taken by the different analyses techniques employed, the activation energy of phosphorus-doped diamond is calculated. Recommendations for future work are also presented.