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Investigation of the electro-optic and dielectric properties of epitaxial ferroelectric thin films

Posted on:2002-12-18Degree:Ph.DType:Dissertation
University:Northwestern UniversityCandidate:Hoerman, Brent HaroldFull Text:PDF
GTID:1461390011992565Subject:Engineering
Abstract/Summary:PDF Full Text Request
The electro-optic properties of epitaxial BaTiO3 and KTa xNb1−xO3 thin films were investigated to determine their utility as the active medium in electro-optic (EO) devices. The relationship between the EO properties, both static and dynamic, and the ferroelectric (FE) domain structure of the films was determined. A theoretical model was developed to describe the magnitude and dynamic response of the EO effect and dielectric properties of multidomain FE films. The effective linear EO coefficient of each film, reff, was modeled as a linear superposition of the EO response of each FE domain variant, and the dynamic EO response was described in terms of a statistical distribution of domain relaxation times.; EO coefficients were measured using a transverse technique. For unpoled films of BaTiO3 and KNbO3, reff was between 1 and 10 pm/V, more than an order of magnitude lower than in bulk materials. The lower coefficients were attributed to reverse, or 180°, FE domains. Calculations indicated 1 to 10% domain alignment in the unpoled films. Consequently, the EO response of the unpoled films is limited by the presence of reverse FE domains. The largest reff values in the BaTiO3 and KNbO3 films, 260 and 480 pm/V respectively, were observed under DC bias fields applied along the ⟨110⟩ axes of the cubic substrates. The larger reff values and hysteretic bias response were attributed to poling of the FE domain structure. An in-plane EO anisotropy was observed in the BaTiO3 and KNbO3 films and was attributed to their multi-variant domain structure.; The transient response of EO, polarization, and dielectric measurements was described by a power law, At−m, extending from ≤6 ns to 1 s in both the BaTiO3 and KNbO 3 film systems. This non-exponential relaxation was attributed to the reorientation of FE domains having a power law distribution of FE domain sizes spanning 9 orders of magnitude. The value of the exponent m was directly related to the power of the size distribution, γ, by the expression, m = γ − 2. The average exponent, m, determined from transient EO and polarization measurements ranged from 0.16 to 0.33. Values were within the predicted limits of the model, 0 ≤ m ≤ 0.5, and similar to that expected for a distribution of domain sizes given by percolation theory, m = 0.19.
Keywords/Search Tags:Films, Electro-optic, Domain, EO response, Batio, Dielectric
PDF Full Text Request
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