The design, construction and three dimensional modeling of a high pressure organometallic chemical vapor deposition reactor

Two high pressure reactors have been designed, built and tested, in order to extend Organometallic Chemical Vapor Deposition (OMCVD) to materials that exhibit large thermal decomposition pressures at their optimum growth temperature. The Differentially Pressure Controlled (DPC) Reactor System was designed and built for use at pressures ≤10 atm. A second generation reactor, the Compact Hard Shell (CHS) Reactor was built in order to extend pressures ≤100 atm.; A physico-chemical model of the High Pressure Organometallic Chemical Vapor Deposition (HPOMCVD) process that describes three dimensional transport phenomena as well as gas-phase and surface reactions underlying the growth of compound semiconductors is presented. A reduced-order model of the Organometallic Chemical Vapor Deposition of InN from trimethylindium and ammonia at elevated pressures has been developed and tested. The model describes the flow dynamics coupled to chemical reactions and transport in the flow channel of the Compact Hard Shell Reactor, as a function of substrate temperature, total pressure and centerline flow velocity.