Growth via low pressure metalorganic vapor phase epitaxy and characterization of gallium nitride and indium gallium nitride thin films

A metalorganic vapor phase epitaxy (MOVPE) system was developed for the growth of III-V Nitride materials. A computational flow dynamics model using the finite element method was employed to analyze transport phenomena. The influence of diluent gas on the MOVPE of AlN and GaN thin films was investigated. The surface and defect microstructures of the GaN thin films were similar for films grown in both diluents. The GaN growth rates were...