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Barium Copper Silicate-Based Low-Permittivity Microwave Dielectric Ceramics And Their Application For LTCC

Posted on:2022-03-28Degree:DoctorType:Dissertation
Country:ChinaCandidate:X Q SongFull Text:PDF
GTID:1481306572973969Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
Microwave dielectric ceramics play an important role in passive electronic components.With the expansion of wireless communication to high frequencies,microwave dielectric ceramics with low dielectric constant and LTCC have been given great attention by academia and industry.This paper closely focused on Barium Copper Silicate-based low-?r microwave dielectric ceramics.The phase composition,crystal structure evolution and microwave dielectric properties of Barium Copper Silicate-based ceramics are systematically investigated.Moreover,a series of Barium Copper Silicate-based LTCC materials were prepared by adding fluoride composite sintering aids,and the co-firing characteristics between the LTCC matrix and the silver electrode were studied.The phase evolution process of Barium Copper Silicate-based ceramics was studied by solid-state reaction method.The synthesis temperatures of BaCu2Si2O7,BaCuSi2O6 and BaCuSi4O10 were 950?,1050?and 1075?,respectively.Moreover,the decomposition temperatures of BaCu2Si2O7,BaCuSi2O6 and BaCuSi4O10 were 1075?,1100?and1200?,respectively.It is clarified that BaCuSi2O6 in Barium Copper Silicate is the preferential phase,instead of BaCu2Si2O7 reported in the literature.The final evolution direction of the phase is determined by the proportion of elements.The microwave dielectric properties of Ba1-xSrxCu2Si2O7 and BaCu2-xCoxSi2O7 solid solutions are investigated using equivalent ion replacement methods.The solid solubility of Ba1-xSrxCu2Si2O7 is x=0.35.When x?0.40,impurity phases such as BaCuSi4O10 and BaCuO2 were detected.With the increasing of Sr2+content,the?r of Ba1-xSrxCu2Si2O7increased monotonously from 8.29 to 8.50,and the quality factor Q×f increased to the maximum value 51515 GHz at x=0.20 and then decreased.The temperature coefficient of resonant frequency?f shown an opposite trend to the Q×f.Optimum microwave dielectric properties of Ba1-xSrxCu2Si2O7 solid solution were ontained when x=0.20 with?r=8.43,Q×f=51515 GHz and?f=-29.70 ppm/?.The solid solubility of BaCu2-xCoxSi2O7 is between x=0.15 and 0.20.When x?0.20,impurity phases such as Si O2 was detected.The?r,Q×f and|?f|of BaCu2-xCoxSi2O7 increase with the increase of Co2+content.Optimum microwave dielectric properties of BaCu2-xCoxSi2O7 solid solution were obtained when x=0.15 with?r=8.45,Q×f=58958 GHz and?f=-34.42 ppm/?.BaCuSi2O6 has a near-zero?f value and its microwave dielectric properties were?r=8.45,Q×f=31424 GHz and?f=+0.36 ppm/?.The solid solubility of Ba1-xSrxCuSi2O6 was x=0.25 and impurity phases such as BaCu2Si2O7 and BaCuSi4O10 were detected when x?0.30.The?r of Ba1-xSrxCuSi2O6 decreased from 8.45 to 8.12 due to the decreasing of the ion polarization in unit cell.The Q×f of Ba1-xSrxCuSi2O6 was closely related to the lattice energy and both of them reached their maximum values at x=0.20.?f depended on the stability of the[CuO4]and[Si4O12]in Ba1-xSrxCuSi2O6.In the range of x=0?0.20,the stability of[CuO4]decreased slightly and?f changed from positive to negative.As for x=0.25,?f decreased significantly due to the stability of the[Si4O12]ring decreased.The excellent microwave dielectric properties of Ba1-xSrxCuSi2O6 solid solution were obtained at x=0.20 with?r=8.25,Q×f=47616 GHz and?f=-9.61 ppm/?.Microwave dielectric properties of Ba1-xSrxCuSi4O10,Sr1-xCaxCuSi4O10 and Sr Cu1-xCoxSi4O10 solid solutions were studied.With the increasing of x value,the microwave dielectric properties of Ba1-xSrxCuSi4O10 changed monotonously.The dielectric constant decreased from 6.03 to 5.59,the quality factor changed from 49952 GHz to 82252 GHz and the temperature coefficient of resonant frequency decreased from-18.00 ppm/?to-41.34ppm/?.The solid solubility of Sr1-xCaxCuSi4O10 and Sr Cu1-xCoxSi4O10 are 0.20 and 0.15,respectively.The stability of the crystal structure for Sr1-xCaxCuSi4O10 and Sr Cu1-xCoxSi4O10were reduced and the quality factor were deteriorated.Sr CuSi4O10 has a low dielectric constant(5.59)and a high-quality factor(82252 GHz),which made it a good candidate for millimeter wave devices.Barium Copper Silicate-based LTCC materials were prepared by adding fluoride composite sintering aids.This series of LTCC materials could be co-fired with silver below900?.After sintering at 875?for 3 hours,the microwave dielectric properties of BaCuSi2O6-3 wt%LMS were?r=8.16,Q×f=24351 GHz,?f=-9.74 ppm/?;microwave dielectric properties of BaCuSi4O10-3 wt%LMS were?r=6.15,Q×f=31389 GHz,?f=-20.30 ppm/?and microwave dielectric properties of Sr CuSi4O10-3 wt%LMS were?r=5.63,Q×f=44710 GHz,?f=-33.87 ppm/?.
Keywords/Search Tags:Microwave dielectric ceramics, Low temperature co-fired ceramics, Low dielectric constant, Microwave dielectric properties
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