| Photovoltaic technology for the sustainable energy production on a large scale is mainly limited by lacking the solar cells with efficient,stable and low-cost characteristics.Antimony trisulfide(Sb2S3)has recently emerged as a promising photovoltaic material for application in solar cells,due to its intrinsic thermodynamic stability,appropriate band-gap,high charge carrier mobility,and low exciton binding energies.This dissertation aims to study the preparation approaches for solution-processed quality Sb2S3-based heterojunction films,tailor the structure and photovoltaic function of the heterojunction films in solar cells,reveal the heterojunction growth principles and the intrinsic correlation between material structure and device performance,and provide the theoretical basis for the research and development of efficient Sb2S3 solar cells.The main activities and results in this dissertation are summarized as follows:(1)Sb2S3 single-crystalline nanorod array is grown on a large scale over polycrystalline TiO2 film by a solution-processing strategy under the assistance of tiny Sb2S3 seeds and a novel material concept of nanoarray heterojunction(NHJ)is proposed,creating an Sb2S3/TiO2 nanoarray heterojunction(Sb2S3/TiO2-NHJ).It is found that the Sb2S3 nanorod growth on the TiO2 film follows a tiny-seed-governed orientation-competing-epitaxial nucleation/growth mechanism.Using a conjugated polymer as hole transporting material and the Sb2S3/TiO2-NHJ as photoactive layer,a novel Sb2S3/TiO2-NHJ solar cell without negative impact of photogenerated electric field on device performance is obtained and a local architecture-dependent charge distribution model is proposed to understand the unique photovoltaic behaviors in the solar cell,resulting in an efficiency of 5.70%in such device with a good long-term stability.In contrast,with a small organic molecule Spiro-OMeTAD as hole transporting material and an insulating organic interfacial layer,a novel Sb2S3/TiO2-NHJ solar cell with strong negative impact of photogenerated electric field is fabricated,in which a hole-selective-tunneling interfacial engineering method is developed to improve the device performance.(2)A tiny-Sb2Se3-seed assisted solution-processing method for growing Sb2S3-NA on different substrates is developed,and the Sb2S3 nanorod growth is found to follow an orientation-competing-epitaxial nucleation/growth mechanism based on the heteroepitaxial nucleation effects of randomly formed tiny heterogeneous seeds.In combination with the growth features of Sb2S3-NA induced by tiny Sb2S3 seeds on ploycrystalline TiO2 film,the correlation between the Sb2S3-NA growth and the surficial characteristics(non-epitaxial-for-seed-growth or epitaxial-for-seed-growth)of beneath substrate and the related principle get elucidated,offering the new insights into the growth of semiconductor single-crystals on polycrystalline substrates.Post-selenization of tiny-Sb2Se3-seed-derived Sb2S3/TiO2-NHJ makes the transformation of single-crystalline Sb2S3 nanorods into single-crystalline Sb2(S,Se)3 quasi-nanorods,creating a novel material system of Sb2(S,Se)3/TiO2 quasi-nanoarray heterojunction(Sb2(S,Se)3/TiO2-quasi-NHJ);additionally,with a conjugated polymer as hole transporting material,the Sb2(S,Se)3/TiO2-quasi-NHJ solar cell without negative impact of photogenerated electric field on device performance is fabricated with a best efficiency of 7.18%,and the physical principles for the effects of S/Se atomic ratio on the device performance.(3)With TiO2 nanorod array as a template,a TiO2/CdS-core/shell nanorod array(TiO2-CdS-NA)is prepared to offer a composite electron transporter for Sb2S3 solar cells,in which TiO2 nanorod acts as core and polycrystalline CdS nanostructured film on the TiO2 nanorod serves as shell;afterwards,the in-situ growth of Sb2S3 nanoparticles in TiO2-CdS-NA renders an Sb2S3-based bulk heterojunction(BHJ)film(TiO2-CdS-NA/Sb2S3),featuring an Sb2S3 nanoparticle film interdigitated by the TiO2-CdS-NA.Using TiO2-CdS-NA/Sb2S3 as photoactive layer and a small organic molecule Spiro-OMeTAD as hole transporting material,we achieve the Sb2S3-based BHJ solar cell with an efficiency of 6.14%,in particular,with an open-circuit voltage(Voc)up to 0.76 V,which is,up to date,the highest Voc value among the Sb2S3 solar cells;With respect to the TiO2-NA/Sb2S3 control device,the introduction of the CdS interfacial layer enhances,respectively,the Voc and efficiency by 31%and 73%.On one hand,it is found that there in TiO2-CdS-NA/Sb2S3 layer exist the band-bending at interfaces,photo-induced space-charging in CdS interfacial layer,and strong interactions at TiO2/CdS 和 CdS/Sb2S3 interfaces;moreover,a photo-induced dipole electric field at CdS/Sb2S3 interface increases the apparent built-in electric field of the solar cell for a rather high device Voc,for which a model on the Voc generation correlated to photo-induced dipole electric field is proposed.On the other hand,it is elucidated that the CdS interfacial layer boosts the charge collection efficiency and short-circuit current mainly by improving the band continuity for charge transportation,passivating the oxygen vacancy defects on TiO2 nanorods and rendering an effective spatial spacer with an energy barrier to reduce the interfacial charge recombination. |