| Dynamic thermal radiation manipulation technology has a broad application prospect in energy,aerospace and other fields.VO2 has an insulation-metal phase transition at 68℃,and its infrared transmittance will change dramatically.Therefore,VO2 is a desired material for infrared radiation manipulation.For the the difficulties of the preparation of VO2,the ambiguous mechanism of infrared regulation structure,and the lack of engineering design of functional devices,the research on dynamic manipulation and application of infrared radiation based on the phase transition behavior of VO2 film is proposed.The main research is focused as following:First,the research on the regulation structure designs of the infrared radiation were carried out.Four kinds of structures are designed with the phase transition behavior of VO2.The first one is the VO2 monollayer negative differential emission structure.By optimizing the thickness of VO2 layer,the maximum△ε3-20μm and△ε8-14μm reach 0.57 and 0.53,respectively.The regulation mechanism is the change of structure resistance loss caused by the change of optical properties of VO2 before and after phase transition.VO2/SiO2/ITO negative and positive differential emission structures are designed.F-P resonance effect is generated within the structure in insulating and metallic states,respectively,leading to the considerable infrared radiation manipulation ability.The maximum negative tunability of△ε3-20μm and△ε8-14μm are 0.52 and 0.57,respectively.The maximum positive tunability of△ε3-20μm and△ε8-14μm are 0.37 and 0.32,respectively.On this basis,the Ag/VO2/Ag tunable perfect absorber is designed,and the maximum△ε4μm is 0.85 caused by the magnetic resonance effect within the insulating VO2.Secondly,the research on the preparations and performance optimization of the infrared radiation manipulation devices were carried out.Firstly,for the VO2preparation,we proposed that using Hi PIMS to prepare VO2 films,and the sputtering process was analyzed.The depositions of VO2 film are studied by adjusting the pulse voltages and substrate temperatures,and the in-situ preparation process of VO2 film is obtained.Then,the tunable properties of VO2 films are studied.The maximum tunability of△T2000nm is 47.33%,and two transition temperatures in heating and cooling stages are 66℃and 54℃,respectively.On this basis,the negative differential and positive differential emission devices of VO2/SiO2/ITO are fabricated after the optimization of SiO2 and VO2 layer,the maximum negative tunabilities of△ε3-20μmand△ε8-14μm are 0.46 and 0.57,the maximum positive tunabiliies of△ε3-20μm and△ε8-14μm are 0.45 and 0.37.Thirdly,the preparation and application performance of infrared temperature regulation device were studied.An active-passive infrared temperature regulation device is fabricated by constructing Joule-heating system on VO2/SiO2/ITO negative differential device.The maximum△ε8-14μm of the device under thermal and electrical responsive modes are 0.62.In the stealth application scenario,the active-passive regulation device has a good stealth effect in both active and passive modes.The active-passive infrared temperature regulation device also has good cycling performance.After 3000 cycles,the infrared tunability attenuation of the device is less than 5%.Finally,the preparation and application performance of adaptive thermal management device were studied.The infrared regulation performance of thermal management device is tested with the help of temperature control system and infrared spectrometer,and the results show that△ε3-20μm of positive and negative sides reach0.49 and 0.50,respectively.The thermal management performance test results show the object inner device has a warming effect at low temperature,the temperature difference reaches 3.5℃.And it has a cooling effect at high temperature,the temperature drop reaches 9.6℃.Finally,in the cycle experiment,after 3000 cycles,the infrared tunability attenuationes of positive and negative emission surfaces are 10.2% and 6.0%,showing good stability. |
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