Research On Low Cost Processing For Preparation High Quality CIGS Thin Film

With the development of human society, people growing demand for energy. However, the current widespread use of is not renewable but depleted energy, such as coal, oil and so on. So, to search the energy which renewable, convenient, affordable for alternative has become urgent problems faced by humanity. As a clean, safe, and renewable energy, solar energy can be get everywhere, so it was widely courted and has been used in many fields. With its high absorption coefficient, low cost and high stability, CuInSe2 (CIS) solar cells were wide attention by the people. It is considered the main materials for third-generation solar cell.First of all, this article make electrolyte potassium chloride with InCl3, SeO2, CuCl2, complexing agent sodium citrate and stabilizer KCl, use HCl to adjust the PH value. At Mo coated soda lime glass prepared thin film solar cell absorber CIS by the potentiostatic deposition method, and the films were during heat treatment and selenium process to improve crystallinity and stoichiometry. Second, use RF magnetron sputtering method prepared Cu (In, Ga) Se2 thin film on Mo coated soda lime glass substrate by a single Cu (In, Ga) Se2 (CIGS) targets sputtering, equally the films have heat treatment and selenium. Finally, a combination of both methods, on the Mo coated soda lime glass substrate deposit a layer CIS with a constant potential electrochemical deposition method first, and then RF magnetron sputtering growth of CIGS layer on the top, and always heat treatment and selenium the films. X-ray diffraction (XRD), scanning electron microscopy ((SEM), energy dispersive spectroscopy (EDS), Raman scattering and other methods were use to characterized the various properties of CIS/CIGS films in the experiment.The results show that:the method that combining of electrochemical deposition and magnetron sputtering use the character of electrochemical like high growth speed, deposition simple and low cost to make up for the shortage of magnetron sputtering at speed and cost first, and also improving the quality of the films that prepared by electrochemical deposition by use the sputtering deposition film's high quality crystalline and good surface morphology. The results showed that the film prepared by the two stage method have a good combination and much better surface smoothness and uniformity than the only electrochemical deposition films, the crystalline also increased. And the time that prepared the same thickness of the film was greatly reduced to compare with magnetron sputtering only, reduce the production cost. Use the combining of potentiostatic electrochemical deposition and RF magnetron sputtering method, we have explored a low cost processing for preparation high quality CIS in this paper.