Study On The Optical Properties Of Ultrathin Al Films And AlN Thin Films And Related Problems

Aluminum (Al) and aluminum Nitride (AlN) thin films have many advantages. The special optical properties of ultrathin aluminum films made it used widely in optic multilayer films. Due to good chemical stability and electrical resistivity, high thermal conductivity and mechanical intensity, wide band gap and low thermal expansion coefficient, AlN thin films can be applied for insulating chips for semiconductor devices with high power, thermal dissipation lagers for large and super-large scale integrated circuits, insulating layers or passivation layers for semiconductor. For its excellent optical properties, AlN can be also used in ultraviolet optical components with high power for thermal conductivity material.Ultrathin aluminum films were prepared by DC reactive magnetron sputtering. The target was made by 99.999% pure aluminum. The spectrophometer was applied to analyze the transmission spectrum of samples. The relationship between spectrum and preparation conditions were studied in this paper.The results are listed as following. The transmission of Ultrathin aluminum films increase evidently, when the working pressure arise. With the increase of sputtering time, the transmission of ultrathin aluminum films decrease linear. As the Distance between target and substrate get longer and the temperature of substrate higher, the transmission of ultrathin aluminum films also arises slightly. The best condition in preparation was also given. The surface morphology of the ultrathin aluminum was analyzed by AFM. The results indicate that it has an excellent surface.AlN thin film was prepared from an aluminum target by DC and AF reactive magnetron sputtering in nitrogen gas mixed with argon gas. The transmission spectrum and thermal conductivity of samples have been measured. The transmission of AlN films increase, when the working pressure arises. Distance between target and substrate get longer also increase the transmission of AlN films. As the temperature of substrate get higher, the transmission of Ultrathin aluminum films decrease slightly. Nitrogen gas concentration and sputtering time barely take effect on the transmission of AlN films. The optimal condition in preparation procession was also proposed. With the XRD spectrum, it shows the AlN thin films have orientation growth with (100) and (110). The XPS results were found that the AlN thin films grow in higher substrate temperature has a higher purity of AlN. AFM confirm higher substrate temperature have...