Study On Growth Of ZnO Thin Film And Fabrication Of Related ZnO-based Devices

Zinc Oxide (ZnO) is a wide band-gap semiconductor,3.37 eV at room temperature,with the high exciton binding energy of 60 meV. Currently, ZnO is attracting attention for its application to UV light-emitters, varistors, transparent high power electronics, surface acoustic wave devices, piezoelectric transducers, gas-sensing and as a window material for display and solar cells. The optical characteristic and photoelectricity response of ZnO have been studied in this thesis. In addition, ZnO-based Schottky diodes and ZnO-based thin-film transistors were fabricated. The main contents of the thesis are as following:(1) Thermal neutrons irradiating the silicon wafer gives rise to fractional transmutation of silicon into phosphorus and dopes the silicon n-type. The method of p-type doping ZnO by proton transmutation doping was presented by reference to that of the silicon.(2) ZnO thin films were prepared on glass substrates by sol-gel spin-coating method. The optical properties and surface morphologies of the films were investigated using photoluminescence (PL), optical transmission spectra, and atomic force microscope (AFM), respectively. The results showed that both the absorption edge and the PL peak blue-shifted with a decrease of thickness of the films, and that PL intensity and line-width were increased for the films with a smaller thickness. The causes resulting in thickness dependence of the optical properties of the films were discussed on the basis of the PL, optical transmission, and AFM analyses. We understood that ZnO is an excellent material for UV detector by research on UV photoconduction...