Study On The Electrotransport Properties Of Novel Semiconductor Indium Nitride Thin Films

This paper mainly illustrates the electronic transport properties of the novel semiconductor material of Indium Nitride (InN). InN is one of the most promising materials with wide applications on the optoelectronic and microelectronic devices. However, many of its fundamental properties are still not clear despite the extensive investigation since the 1980s. Therefore it is crucial to study the electronic transport properties of InN thin films in detail.In this paper, we first make an introduction to the variable magnetic field Hall measurement system, mobility spectra analysis (MSA), and the weak localization theory together with Raman spectra and spatial correlation model (SCM), then give a systemic investigation on the classical transport properties of the InN thin films, including the contribution of surface and bulk carriers to the transport characteristics via MSA procedures and temperature-dependent mobility and concentration characteristics of them. The calculation results indicate with the variation of the temperature from 10 to 300 K, the carrier concentration remains unchanged, for our InN sample studied here is a highly degernate semiconductor material, in which the donors and acceptors are fully ionized...