Study On The Growth And Characteristic Of Diluted Magnetic Semiconductor GaMnN Film By ECR-PEMOCVD

This work is supported by the national natural science foundation of China (theself-organized growth and characteristic of GaN based diluted magnetic semiconductorquantum dot #60476008 ).In GaN based diluted magnetic semiconductor(DMS) , GaMnN becomes the brightestoutlook diluted magnetic semiconductor, because in particular the Cruie Temperature ofGaMnN surpasses the room temperature and background material GaN can obtain thewidespread application in high temperature and high efficiency photoelectric device area.The paper is based on the fact that the craft of the GaN film has been studied out. Andfurther study the growth and characteristic of GaMnN DMS by mixing Mn. The experiment iscarried on the Electron Cyclotron Resonance-Plasma Enhanced Metal Organic ChemistryVapor Deposition (ECR-PEMOCVD) equipment which is installed Reflection High EnergyElectron Diffraction equipment to monitor. DMS film GaMnN is grown on substrate sapphire(0001) using Cp₂Mn, N₂ and TEGa by ECR--PEMOCVD.Mn mole of concentration in the film dependence of the temperature, Cp₂Mn flux and N₂flux is studied in this experiment. We find that enhancing the Cp₂Mn flux, appropriate growthtemperature and enhancing the N₂ flux all can enhance the Mn concentration. In theexperiment, the temperature is too low,which can make against the dissociation of Cp₂Mn toresult in Mn concentration not to be high; the temperature is too high,instead creating thevolatilization of Mn deposited to the film, therefore the manganese concentration reduces;680℃is the appropriate growth temperature.Enhancing N₂ flux can enhance the density of Nplasma, which evidently is useful to promote the dissociation of Cp₂Mn, therefore enhancingN₂ flux is easier to obtain high Mn concentration GaMnN film. The GaMnN film which hasMn content 2.952% is successfully obtained and the crystal quality is very good.At the same time the crystal quality dependence of Mn content is also studied. For theconcentration of the GaMnN film 0.134%～2.952%, RHEED exhibiting that the diffracttiondot is bright and regular, shows the crystal quality is very good. Through XRD Measurement,GaMnN films exhibiting good (0002) preferred orientation, show the films are inclined toc-axis growth and retain good wurtzite structure. AFM is used to characterize the surfacetopography of GaMnN film, which is composed of many submicron grains piled in theconsistent orientation. Superconducting Quantum Interference Device (SQUID) measurement shows the film isferromagnetic, which only probably come from the ternary phase GaMnN. The temperature ofGaMnN film is higher than 350K. Moreover, higher Mn concentration can enhance the Curietemperature of the film.