3D Cellular Automata Simulation Of Thin Film Growth And Sdudies On The Fractal

The development of thin film materials has important effects in high-tech field such as microelectronics and MEMS. A considerable number of experimental and theoretical studies are focused on film growth,because many properties of thin film materials depend on the film morphology and microstructure which is influenced by the atom-level growing process. Use of computer simulation, dynamic process of atom-level thin film growth can be obtained, experiment phenomenon can be made clear and influence of experiment condition can be analyzed. It provides a way to find out the whole physical process of particle deposition and thin film growth. Because of these, it builds a bridge between theory and application and has important instructional meaning for finding experiment technology and means for obtaining thin film with special performance.Cellular automata model is a kind of computational model which can describe macroscopic complex behavior and its"bottom-up"evolution in a system which based on simple microscopic local interaction mechanism and self-organization evolutionary rules of components in the system. This paper aims at the complexity of migration and diffusion of particles. After analyzing the process and mode of thin film growth, a simulation model of thin film growth based on 3D Cellular Automata combine with Monte Carlo was built. The model based on cell and its neighbor and the local self-organization rules of cellular automata abstracted from the characteristic of thin film growth, use of OpenGL technology to achieved intuitive simulation of film growth process in the programming environment VC7.0.In this paper, through computer simulation of film growth, the effect of the deposition rate and deposition temperature on the surface morphology of film was investigated with the model, and the relationship between 3-D fractal dimension and covering rate was studied too. The relationship between roughness and covering rate for film under different conditions and relationship between 3-D fractal dimension and covering rate are discussed in detail in this dissertation. The results demonstrated that at the same deposition temperature, when the deposition rate is low, the roughness of film does not change with the increasing of deposition rate. However, the roughness of film rises with the increasing the deposition rate further. Especially, if they have the same deposition rate, the roughness of film will reach a minimum value and then increase with the increasing of deposition temperature. Therefore, it can be concluded that the roughness of film does not rise with the increasing of deposition rate. The 3-D fractal dimension calculated can reflect the whole self-similarity of thin film. Result of the Simulation is in line with the real situation and shows that the model built is correct and can be used to simulate the process of thin film growth.