Study On The Electrical And Thermal Properties Of Fto Glass Film

In this paper we used fluorine doped tin oxide (FTO) thin film made by chemical vapour deposition (CVD) and indium tin oxide (ITO) thin film made by magnetron sputtering as experiment sample. We had analysed the electrical and thermal properties of glass film material. In material terms, analyse the microscopic mechanism and influencing factor of thermal conduction, including substrate and film effect on the thermal conduction, and optics, electrics, calorifics characteres and the relationship between them.In this paper we used X-ray diffraction, X-ray fluorescence, Ultraviolet-visible spectrophotometer, Fourier's transform Infra-red spectroscopy, four probes resistance meter, profilometer and ellipsometer to analyse the structure, component, transmission and reflection in the visible range, near and middle infrared range, square resistance, thickness double layer coating of ITO and FTO film. Physical Property Measurement System's AC Transport Option measurement were used to test I-V curve and hall coefficient, and Thermal Transport Option test thermal conductivity, then calculate alternating current resistivity, carrier concentration and mobility of the sample.The results show that the main component of top-layer film of FTO film is SnO2; the main component of transition film is SiO2. The doped rate of Fluorine in the film is below 0.92%. The electric property is completely decided by the top film, which is in cubic rutile structure. The main component of ITO film is In2O3, which is used as comparison is cubic bixbyite structure.The doped rate (mole-percentage) of Tin in the film is 8.75%. We could use phonon thermal conduction to explain mechanism of thermal conduction of glass substrate and transition layer. In ITO and FTO film phonon thermal conduction play a major role. For identical series sample (FTO) the large electro-conductibility the lower thermal conductivity. As the atomic weight difference between cation and oxygen is small in ITO film than FTO, there are more elements of symmetry in ITO, the configuration of ITO is more compact and it's thicker than FTO, so the thermal conductivity of ITO film is larger than FTO film. The larger optical absorptivity of film the more photon were absorbed, so the thermal conductivity also larger. For the same sample under the same experiment condition when without regard to convection with the emissivity increase the thermal conductivity decrease in linearity. The fitting formular for FTO and ITO film is: k=0.89969-0.0186×E and k=1.04995-0.0178×E, respectively.