Preparation And Properties Of ZnO-Based Transparent Oxide Thin Films

ZnO is a semiconductor material with a wide band-gap of 3.37eV and good electrical and optical properties. ZnO thin films have been extensively studied as prefect materials for the applications in ultraviolet detector and luminescent device.At present, the reported ZnO thin films are often deposited on GaN, sapphire and ZnO. Although these substrate is matched with the ZnO thin film; however, the cost of the substrate is expensive, the conductivity is poor and hardly to be integrated, thus Si substrate has advantage. It is very difficult to grow high quality ZnO thin films on Si substrate due to the large lattice mismatch between the ZnO thin film and the Si substrate. In this paper, firstly, ZnO thin film was deposited on Si substrate using radio frequency magnetron sputtering method, the oxygen and argon gas was used as the reactive gas and spurted gas respectively. The effects of different sputtering condition on the properties of ZnO thin film were investigated. Then, by deposition an Al₂O₃ film as buffer layer, the quality of ZnO thin film deposited on Si substrate was improved. Finally, the p-Si/n-ZnO ultraviolet detector was discussed...