Preparation And Photocatalytic Performance Of Visible Light Response Bismuth Oxide Thin Films

Bi₂O₃ is an important semiconductor material due to its excellent character, leading an important role in oxide material system. Its wide band gap, index of refraction, dielectric constant and photoconductivity make Bi₂O₃ the first choice for a new generation of semiconductor photocatalytic material.In this thesis, it reports that Bi₂O₃ thin films have been prepared on the surface of the glass substrate by the sol-gel method. It reports optimizing solar systems sol system and optimizing annealing process. Widen the range of visible-light response and increased light energy utilization complete with the method of doping rare earth irons and compound semiconductor.This thesis mainly reports the character of Bi₂O₃ with La³⁺ doped and compound semiconductor V2O5/Bi₂O₃, Co3O4/Bi₂O₃ with removaling of rhodamine B. The results show that both Bi₂O₃ with La³⁺ doped and compound semiconductor show obvious red shift and band gap energy decrease. It shows visible-light response of Bi₂O₃ thin films photocatalyst and increases removal of rhodamine B. Using kinetic equation notes the rate of reaction changes and the degradation rate of Co3O4/Bi₂O₃ significantly enhance.X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscope (SEM), a surface profiler and a spectrophotometer were applied to characterize the these bismuth oxide films and analyze the surface topography, composition elements, crystalline structure and catalytic performance of the Bi₂O₃ thin films. The results show that theβ-Bi₂O₃ and Bi₂O_2.33 composites Bi₂O₃ thin films after annealing. In some extent doped and composite modified restrain the transform fromβ-Bi₂O₃ to Bi₂O_2.33 and the growth of crystal, then increase the surface roughness.