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Synthesis And Properties Of SI3N4 Nanofibers Via Gas-pressure Annealing Method

Posted on:2011-05-09Degree:MasterType:Thesis
Country:ChinaCandidate:M SunFull Text:PDF
GTID:2121330338980924Subject:Materials science
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In this paper, Si3N4 nanofibers were synthesized from silica sol and sucrose through the processing of sol-gel, thermal decomposition and gas-pressure annealing. First, the Si-O-C nanoparticles were designed and synthesized as the precursor for Si3N4 nanofibers; then the Si-O-C nanoparticles were annealed under N2 gas pressure atmosphere to produce Si3N4 nanofibers. The influences of the temperature and gas pressure on the growth of Si3N4 nanofibers were systematically investigated, and the optical, electrical and mechanical properties of Si3N4 nanofibers were also studied.The reaction temperature was a key factor for the growth of Si3N4 nanofibers in the experiments. When the reaction temperature was set at 1400℃, only very few Si3N4 nanowires, with an average diameter of 100nm, were found on the surface of the sample. When it was 1500℃, the products were belt-like Si3N4 nanofibers with width of 300-400nm and thickness of 70-100nm. When it was up to 1600℃, the size of belt-like Si3N4 fibers was more than the nanoscale. With the holding time changed from 0.5h to 4h at 1500℃, the yield of Si3N4 nanofibers were significantly increased, and the products were Si3N4 nanobelts with the bandwidth of 150300nm and the thickness of 20 90nm.The initial N2 gas-pressure for annealing ranged from 0.2 MPa to 1.0 MPa in the experiments. The size of Si3N4 nanofibers grown larger with the increase of the presssure under 1500℃, and the products was nanobelts with the bandwidth of 200400nm and the thickness of 3090nm. When the pressure was 0.2MPa under 1600℃, there were SiC nanowires appeared due to the lack of the nitrogen pressure. With the gas-pressure increased, Si3N4 nanofibers were found much closer to the raw materials.The optimal synthetic parameters for the growth of Si3N4 nanofibers were proposed according to the experiments. When the Si-O-C nanoparticles were annealed at 1500℃for 2-4h under 0.2MPa N2 gas-pressure atmosphere, large quantities of pure a-Si3N4 nanobelts were obtained with the bandwidth of 150300nm and the thickness of 20 90nm.The prepared Si3N4 nanofibers exhibit good luminescent properties, which can emit kinds of spectra ranging from 246nm to 595nm. The conductivity of Si3N4 nanofibers was 10-9 S·cm-1. The nano-hardness and elastic modulus of Si3N4 nanofiber were 19.7GPa and 203.8GPa respectively, indicating that the Si3N4 nanofibers have excellent mechanical properties.
Keywords/Search Tags:Si3N4 nanofibers, gas-pressure sintering, growth pattern, property
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