Synthesis,Characterization Of Photosensitive Polyimide

The innovative technology of advanced specialty makrials, such as the high tempera- ture polymers brought about a ne~v age of advanced industrial products. Photosensitive polyimide (l~SPl) is one of these materials. It is applied in integrated circuits, resistors ,etc. In many cases pattern formation in a polyimide coating is required. It, then, is desirable to prepare a P1梡recursor, which behaves as a positive or negative I)l~)t~)resist. Negative PSl~1 can be divided into three types: ester-type PSl~I, ion-type I~SPI and auto-PSPI. in this paper, direct photo-patterning of PSPI films was synthesized based on the modification of the Pt precursor, the polyamic acid (PAA) ?For the first time, we let toluene-2,4-diisocyanate (i抣)I) and I ILA react with PAA to gain a ester-type PSPI , and solve the difficulties of esteriting; For the first time, we use acrylic acid (AA) as antipaticle to react with the amine-radices to gain a new ion梩ype PSPI, ~vhich is just on the contrary ~vith traditional ion梩ype PSPI; For the first time, a type of ion桺SPI was gain by using a brunch-like inacromolecular with eight double bonds as antipaticle. 慬he harden time was increased so the exposure energy was decreased; 2. 慬he relationship between the photosensitive groups density of the PSPI and the exposure energy and distinguish capacity?was discussed. It was Iiiind that too high density of photosensitive groups leaded a decrease of exposure energy hut the distinguish capacity was also decreased; 3. The relationship between the molecular weight (inherit ~慽scosity)of the ion-type PSPI and the exposure energy and distinguish capacity was also discussed. it was found that II 4~i~ with the increase of molecular ~veight the exposure energy decreased and the distinguish capacity was also decreased; 4. We also discussed the relationship between the of the ion-type PSPI and the exposure energy and final film thickness. It was found that with the increase of active thinner quantity the exposal energy decreased and the final film thickness was decreased too; 5. The properties of these PSPI were investigated through TGA, DSC analysis. They were characterized by IR spectra, and SEM spectra also.