Compared Study Of Growth Methods Of Si-based â…¡-â…¥ Luminescent Crystal Materials

Si-based â…¡-â…¥ luminescent crystal materials have very extensive and potential applications. However, high-quality epitaxial wafers are difficult to be grown on Si substrate. By the essential control of the initial stage of â…¡-â…¥ material growth, the high-quality crystal films can be obtained.By using MOCVD technology, studies of some kinds of methods such as Hydrogen-terminated, Nitridation, Plasma-assisted, Growth of two stages and Sputtering buffer layers have been conducted. By measuring of XRD, PL, SEM and TEM, and analysis of spectra of XRD, Raman scatting, OA, and PL at different temperatures, we observed that the crystal quality has been improved markedly. In the experiments, we also found the â…¡-â…¥ sources flow rate, temperate of the substrates, annealing time and annealing temperature have an important infuence to epitaxial quality of the films.