| Titanium oxide (TiO2) films are prepared by radio frequency (RF) magnetron sputtering. The target is TiO2 ceramic. After deposition, the films are annealed in air at 200℃, 400℃, 600℃, 800℃, 1000℃, 1200℃for 0.5h and 1h. The microstructure, chemical composition and photoelectric properties of the films are analyzed by x-ray diffraction (XRD), atomic force microscopy (AFM), x-ray photoelectron spectroscopy (XPS),ultraviolet-visible spectrophotometer (UV-Vis) and four-probe instrument. Microstructure analysis shows that the films still keep the square crystal structure. There are different crystal phases during annealed at different temperature. AFM analysis indicates that TiO2 average granularity from diminishing to increasing with increasing annealing temperature. XPS analysis shows that when annealed at lh, with increasing annealing temperature, binding energies of Ti2p in the films fall from 458.26eV to 458.18eV. The photoelectrical property analysis shows that after annealing, the TiO2 films represent excellent transmission: the average transmittance over 200～900nm is 50% for low temperature sample; at the same time, it is 15% for high temperature sample. Electrical resistance that expresses excellent is 78.9Ω·cm when annealed at about 1200℃, and figure of merit represents excellent at about 300℃to 4.4×l0-3Ω-1.This paper consists of four chapters. The first one is an introduction, summarizing the background, significance and related researches. The second chapter expatiates on the film preparation and the influence of annealing condition on film microstructure, chemical composition. The third chapter indicates on the film photoelectricity and the influence of annealing temperature on film photoelectrical properties. The fourth one is conclusion. |
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