The Seasonal Film Of Copper Quasi-two Dimensional By Electrodeposition And Regular Arrays Of Wires Formed By Hydro-etching

At present, the system of ordered arrays nano structure is a researchful hotspot; it has many potential applications, such as field emission displays, high-density memory devices, ultra-micro-nano-array laser, a new self-assembly electronic device and so on, so it has people's attention. The main contents and conclusions are as follows:By using electrodeposition method, in a quasi-two-dimensional thin liquid layer through precise control of the electric potential, deposited with a series of orderly two-dimensional periodic oscillation of nano-structured film, this is the first phase; The second phase of the work is on the basis of the first phase, the use of oxidant made the two-dimensional film structure etched into one-dimensional nanowire arrays orderly structure. And respectively on the stage of the experiment samples were obtained SEM, AFM, XRD, XPS, TEM the morphology and structure characterization of components, the final structure of the two samples were electrical properties of measurement and analysis.The quasi-two-dimensional electrodeposition method of preparation of nanometer copper cycle thin film materials of the growth mechanism was analyzed. And periodic oscillations of the voltage applied to the impact of growth morphology, that the greater frequency of the periodic oscillations corresponding width of the narrower; and at the same frequency, width and height of the growth changes。At the same time wet etching on the copper cycle nanowire array of mechanisms for understanding. Through the structure of nano-cyclical growth mechanism can be the analysis of frequency and voltage value growth is the key factor in quality etching, because sediment deposition wide width slightly greater height gap easy to handle, which corresponds to the frequency slightly smaller and larger voltage Growth conditions ,affecting the quality of etching factors is also the concentration of etching solution, owing to artificial control of the process completely, so the reaction time longer easy to control, so the solution concentration sufficient to configure small, in order to ensure that etching process more precise control.Finally, the nano-structure of copper and arrays connected to the circuit respectively, at ambient temperature and low temperature measure the electrical character of two structures. The former puts up the good performance of metal, Calculate copper the rate of nano-structure of the resistance, its magnitude is 10?5 , that the standard of materials and the resistance rate is 1.7×10?8 , produced this result because of nano-materials than conventional grain of small grains and thus its boundary on the atomic More than a few grains within the atom, a high concentration of grain boundaries, so that nano- materials have a high rate of resistance characteristics For the latter, by measuring that the copper nanowire array structure to better performance of the metal in nature, That there is no change in etching the element of the original material, the same sample calculation of the rate of resistance, and the results are the same as the conclusions of the former, further clarification of the line array elements.