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The Design Of Sample Pretreatment Device For Electron Spectrometer And The Application Of XPS

Posted on:2008-07-30Degree:MasterType:Thesis
Country:ChinaCandidate:H Z SunFull Text:PDF
GTID:2121360242978616Subject:Physical chemistry
Abstract/Summary:PDF Full Text Request
X-ray photoelectron Spectroscopy, providing many information such as chemical states, surface composition and structure and so on, has been regarded as the crucial measurement on surface analysis. But present-day electron spectroscopy can not be used to analyze sample reacted in situ. This thesis design and manufacture a sample pretreatment device for electron spectroscopy, which can be used to transfer the sample to the spectrometer under nitrogen without exposure to air. In order to investigate the effective of the designed device, the forms of surface species in oxidic, reduced and sulfided NiMoP/Al2O3 catalysts were investigated by XPS technique.The results are listed below:(1) The catalysts can not be reduced in the hydrogen below 300°C.(2) No matter what pretreatment method, the main species on surfaces of catalysts after thiophene hydrodesulfurization reaction are molybdenum nickel oxysulfide, molybdenum sulfide and metal nickel. Thererfore, the catalyst exhibits high activity for thiophene hydrodesulfurization (HDS) under presulfidation- and calcination-free conditions.The results showed that no oxidation of the catalysts occurred during the transfer of the sample from the sulfiding reactor to the XPS chamber by using the sample pretreatment device.In the application of X-ray Photoelectron Spectroscopy in surface analysis, the results are listed below:(1) Through XPS dissection an inorganic fluorescent material-the optical transition additive in farm film, it can be arrived that the state of Ca and S exist as multi-modality, Cu as Cu+ and Eu as Eu2+ in the preparation of an inorganic fluorescent material, and mostly oxygen is the nearest coordination atom not only with Cu+ but also with Eu2+.(2) During the analysis of TiO2 thin film, it can get hold of the appropriate sputtering condition about sputtering the surface of TiO2 thin film with Ar+. (3) The depth of SiO2 thin film is arrived through using formula and non-destructive profiling by variation of the electron emission angle or the electron energy.
Keywords/Search Tags:sample pretreatment device for electron spectrometer, design, application
PDF Full Text Request
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