Study On Growth Condition Of SiC Nano-whisker By Laser Irradiation

Laser, as a kind of heat resource, had been used to synthesize nano- materials in the past years because of its instant nonequilibrium output of energy and its speedy heating capability. Because the energy density of laser take on the gradient distribution in the three dimensional space, the temperature field is found when the laser beam irradiate on material in the area of laser beam, so that the abundant conditions to synthesize materials can be created.In-situ growth of SiC nano-whiskers by direct laser irradiation on SiC nano-particles was investigated in this paper. Steady growth conditions and growth process of SiC whiskers by laser irradiation were researched. The main work accomplished and conclusions got are presented as follows:1. Energy field of layer which was parallelled to spot Laser irradiation had been analyzed. Energy model of Gaussian distribution was established after laser output model TEM0 had been simplified to based beam TEM1.2. Temperature field of the vertical irradiation layer was established and analyzed.3. The experiment of laser irradiation was made out with the method that the laser and irradiating surface are upright. The microstructures of the sample prepared by laser irradiation were studied in detail with scanning electron microscopy.4. Growth situation of whisker in samples with and without blinders were compared under a certain laser parameters, then the effect of blinders on the whisker purity, morphology and quantity was analyzed.