| Because of their unique microstructure, antiferroelectric materials display the different electric-field inducted phase transformation from antiferroelectric to ferroelectric (AFE-FE), and the phase switching process can be adjusted by the change of temperature and hydrostatic pressure. Antifreeoelctric materials have the potential usage in energy storage, high-strain transducers/actuators and tunable pyroelectric thermal sensors due to the remarkable change of polarization, strains and current during the AFE-FE switching. Hence, in the present investigation PbZrO3 based antiferroelectric thin films were studied in detail for the application in practice. Pb0.97La0.02(Zr0.95Ti0.05)O3 antiferroelectric thick films were fabricated by sol-gel process. Influences of precursor solvents which are acetic acid and 2-methoxyethanol on dielectric properties of antiferroelectric thick films were investigated. The results showed that Pb0.97La0.02(Zr0.95Ti0.05)O3 thick films fabricated via adopting 2-methoxyethanol as precursor solvent presented stable antiferroelectric state. The AFE-FE phase transformation field was 184.05×103V/cm and the FE-AFE phase transformation field was 68.24×103V/cm. The maximum polarization was 88.8μC/cm2.Different concentrations PbZrO3 antiferroelectric thick films were successfully prepared via Sol - gel process on the Pt (111)/TiO2/SiO2/Si substrate. The analysis by the X-ray diffractometer showed that (100) growth orientation intensity for the thick films increased with the concentration added. As the concentration increased, the surface roughness of thick films increases and cell particles grew by AFM, which is due to the stress of thick film on the substrate. C-V and P-E testing showed that the width of phase transition field and hysteresis became larger, the saturation polarization of P-E curve was also growing, and the antiferroelectric properties was more and more stable with the concentration increases.The anti-ferroelectric thick films was successfully prepared on the silicon substrate via different heat treatment process, the maximum orientation degree of PLZT thick film is 0.79 after 700℃treatment. The curves of P-E, C-V and the temperature spectrum indicated the saturated polarization was maximum, the dielectric constant was maximum, and the dielectric loss was minimum after 700℃treatment.Antiferroelectric PLZT thick films by the XRD showed that the (100) growth orientation degree of thick-film increased with the film thickness increasing. C-V and P-E testing showed that when the film thickness was 2244nm, the electric field which leads to phase transformation and the hysteresis width of film was wider, which showed that the antiferroelectricity was more stable, the saturation polarization was greatest. When thickness of the film was greater than 3000nm, its saturation reduced, which mainly is because that the changes of thickness caused difference of PLZT thick films microstructure. |
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