Preparation Of Silicon And Silver Nanowires And Si Nanowire's Thermoelectric Performance Analysis

In recent years, silicon nanowires have more attentions due to their special physical properties and potential applications. Because of their own specific fluorescence, UV optical properties, field emission, electron transport electrical properties,high surface activity, heat conduction, quantum confinement effect and the Coulomb blocking effects, silicon nanowire is likely to become anew materials in the nanoelectronics field.This paper describes several relatively mature technology at home and abroad preparation method of silicon nanowires, and on this basis, introduced a newer, faster method of preparation of silicon nanowires, which is called electroless metal deposition (EMD) method. This is a method that silicon nanowire grows through the silicon wafer through selective etching. The author have done a lot of research and analysis about this method.Silver nanowires is based on a method of EMD. It is successful to prepare ultra-long silver nanowires based on the preparation of silicon nanowires. The causes of ultra-long silver nanowires is now an unknown dimension. After several experiments, we found that the concentration of reactants, ambient temperature and pressure are significant to the growth of silver nanowires. have a significant impact; In addition,silicon wafer as a reaction to the main body becomes an important factor in the formation of silver.Then, we make a systematic analysis of the thermoelectric properties of silicon nanowires. The merit ZT is the comprehensive parameter to evaluate thermoelectric properties of materials, and the factors that affect the size of ZT, are Seebeck coefficient, thermal conductivity and electrical conductivity respectively. In order to estimate the value of ZT, we need the full and accurate explanation that their impact of Seebeck coefficient, thermal conductivity and electrical conductivity. In this paper, we answered e-Boltzmann transport equation for the estimation of these parameters, and estimated the ZT value of silicon nanowires.Finally, we introduced some successful applications of the silicon nanowire at home and abroad. These applications are just stay in the laboratory stage, and they can not be applied in practice. Currently, researchers have already produced several silicon nanowire nano-electronic devices in the laboratory, such as field-effect transistor (FET), single-electron detectors, single-electron memory devices, the two sides to electronic pumps. In addition, there are also nano-sensors that used in medicine, chemical detection, and silicon nanowire solar cells which have excellent light absorption properties and unique characteristics of electronic transmission.