The Simulation Of The IGCT Model And Topology

The power electronic device is the base of power electronics and its application equipments. In this paper, the character and developing trend of GTO, IGBT and IGCT (Integrated Gate Commutated Thyristors) is analysized. It introduces the simulation softwares often used in electronics field. A simulation model of IGCT is designed in PSIM software. The simulation model has enough certain accuracy and high simulation speed. The structure and parameters determination of the model is given.The simulation accuracy of the model is proved through experiments with the test circuit designed in this paper.This paper introduces the topology of high power inverter with IGBT, GTO and IGCT, especially the IGCT inverter topology is analogized in details.The IGCT inverter is simulated in PSIM. The simulation results show that the IGCT topology given in the paper is correct. It gives the calculation and simulation waveforms of the inverter with the snubberless and snubber circuit.