The Effect Of Irradiated Defects In Nitrogen Doped Cz-Si

Irradiation environments can induce silicon-based semiconductors to be invalid. So it is required that the semiconductors device should have good property to resist irradiation under the condition that firmament irradiation, nuclear blast irradiation, aurora radiation etc. NTD technology can dope phosphorus in silicon crystal which has the advantage of easy control, good equality, and low cost, while has caused wide attention.Neutron irradiation can produce simple point defect such as vacancies and self-institial silicon atoms, which can react with impurity atoms to create new complexes or defects, therefore the electrical properties of silicon wafers will change. Oxygen is one of the most important impurities in Czochralski-grown crystalline silicon, and it can enhance the mechanical strength of silicon wafers, cause thermal donor, new thermal donor and oxygen precipitates. Nitrogen is also the most important impurity of silicon crystal expect oxygen. It has been found to restrain thermal donor, new thermal donor and VIOD, but in the same time oxygen precipitates can be promoted by nitrogen doping. The nitrogen-doped silicon has been paid more attention recently. NTD NCZ's electrical properties can be largely changed and oxygen precipitates can also be largely affected after thermal treatment. However, the investigation of NTD NCZ-Si is seldom yet.Electrical properties of NTD NCZ-Si have been investigated after different temperature thermal treatment because of irradiation defects. It is found that the concentration of carrier obviously increased after annealing at the temperatrue range of450C-1050C.Defects caused by neutron irradiation have been investigated by means of infrared spectrum in nitrogen doped CZ-Si. A-center can be turned into new complexes such as V2O, VO2, VO3, VO4 with the increase of the temperature. On the other hand oxygen-nitrogen complex can also increase after thermal treatment.Oxygen precipitates can be found to enhanced after one-step and two-step annealing. No denude zone was found in NTD NCZ wafer. It is believed that nitrogen complex irradiation defects to form complexes, which enhance oxygen precipitation.