Study Of Photon-Injected Total Internal Reflection Optical Switch

With development of optical network and optical communication,and the introduction of conception of optical swap,optical switch and optical switch array is playing an important role.The speed of traditional MEMS optical switch,heat optical switch,liquid crystal optical switch is several ms,which cannot catch up with the demand of optical swap. The electronic-optical switch is sensitive to polarization,so it is hard to satisfy the demand of optical swap. But the speed of photon induced optical switch can be several ps,and it is independent to polarization. With the optimization of its structure,its performance can be applicable. So study of photon induced optical switch has science research value and application value.'In this thesis,we described the principle of photon modulation,the model of photon induced careers and the model of carrier-induced index change. We analyzed the effect of 3-D structure of waveguide to the lightwave in the waveguide. At the same time we analyzed the effect of enlarged waveguide to the improvement of asymmetrical Y-branch optical switch performance. We simulated and analyzed Y-branch TIR optical switch with enlarged waveguide with FD-BPM. Based on the enlarged waveguide Y-branch,we introduced the sheared Y-branch TIR structure. After analyzing the structure parameters of the sheared asymmetricalY-branch,the extinction ratio of the TIR optical switch can be more than 40dB in theory.By wet erode,we finished photon-induce total internal reflection Y branch optical switch with GaAs material. We collect distributing of near-field of optical switch output-port. Using Gaussian curve fit,we measure the extinction ratio of "bar channel" is 8dB,and the extinction ratio of "cross channel" is more than 18dB. The precise measurement of the device performance parameters will be finished after the device is packaged.