Double Barrier Quantum Dots Photoelectric Detector Characteristics Research

Photosensitive has a wide range of applications in the aerospace, military and biological fields. The overall objective of the device testing and analysis, and depending on the characteristics of the photovoltaic device, select a different application areas are the focus of this article.In this paper, GaAs/AlAs/AlGaAs/InAs Double barrier quantum dot quantum well detector do comparison from the relevant device performance at different temperatures. And devices to detect quantum dot fluorescent reagent has made attempts to get the preliminary results. These conclusions and results are as follows:1. We used Bruker VERTEX 80/80V Fourier transform infrared spectrometer to measure the spectrometer of our device accurately at room temperature and low temperature(77K). According to the device structure, we discuss the peak appearance and compare the performance of the device at room temperature and low temperature.2. As a result of the charge storage effect, we have an initial bias voltage applied to the device. And, we found -2V initial bias make the response of the devices increased by 80.34%(0.1V) when the light power was about 3.3pW.3. We used the spectrometer which developed by us to measure the fluorescence excitated by CdTe quantum dots and illustrated the performance of our spectrometer. The CdTe quantum dots aqueous solution was stimulated by the light of 470nm wavelength. The measure result can compare with PerkinElmer LS55 fluorescence spectrophotometer.