The Investigation For Magnetic And Electrical Properties Of Nanomaterials’ Microstructure

Nanoparticles have widely been applied in electronic materials, optical materials, magnetic materials and high-density materials. However, the resonance frequency of many electronic devices has been up to the GHz frequency band, such as magnetic probes, inductors, transformers, etc. The lower speed of information transmission and processing also restricts application of magnetic device in high-frequency. The traditional magnetic materials can not satisfy these requirements, so it is necessary to research a kind of soft magnetic material consisting of high cutoff frequency, high permeability and small eddy current loss. In addition, Flash memory as a traditional non-volatile memory device has been restricted due to the contraction of their working life and the slower write speeds, etc. Nevertheless, the resistance random access memory has instead of that mentioned above attributed to its high speed, high density, low power consumption and miniaturization of its considerable prospects recently. In this thesis, it is obtained these conclusions mainly based on low-dimensional nanostructures deposited anodic aluminum oxide (AAO) template to regulate and control the growth of the magnetic film aiming to study its corresponding electromagnetic properties.1. Based on the double-pass AAO template to make a highly ordered nanowires and nanotube arrays. We have researched for different magnetic moment rotation mechanism by studying statics and dynamics properity in different length of Fe nanowires and nanotube.2. Based on the double-oxidation of AAO template to prepare a CoFe2O4nanomaterial successfully. The high and low resistance transformation is found in the sample by studying its electromagnetic characteristics. The resistance change behavior is explained by utilizing conductive filament theory, which promoting the development of resistance change random access memory.3. The Co92Zr8films are prepared on the AAO (the aperture d-20nm) and Si substrates at room temperature by radio frequency magnetron sputtering. By the measurements of the static and dynamic magnetic films for the two substrates, the big microwave absorption intensity is proved in the film with columnar structure on the AAO substrate. 4. The FeNi films are prepared on the AAO (d-20nm and40nm) and Si substrates at room temperature by radio frequency magnetron sputtering. Stripe domain structure is formed easily in the film with columnar structure on the porous AAO substrate. Meanwhile, the magnetic domain structure and high frequency characteristic of the film could be regulated and controlled by different apertures for AAO template.