High Energy Storage Dielectric Materials Based On SrTiO₃

SrTiO3ceramic represents good dielectric constant, high breakdown strength,low dielectric tunability, and large energy density, so it has a wide range ofapplications for energy storage. In this paper, the traditional solid-state reactionmethod was taken to prepare the dielectric material SrTiO3system. Furthermore, threeresearch methods of equal ion doping, sintering aids adding and unequal ion rare earthion doping was used and the effect of different dopant on crystalline structures,microstructures and properties of the ceramics was investigated. The dielectricmaterials with excellent performance were prepared. The details are as follows:1. MgTiO3and CaZrO3was selected to doped on SrTiO3system for multi-ionsdoping experiments, the effect of changes in the amount of MgTiO3and CaZrO3doping on SrTiO3systemwas discussed. The phenomenon of multi-ion recombinationexperiments doping was different from single ion doping, the doping amount of oneion will affect the solubility of other ions, which will bring a series effect on theperformance of the multi-ions doped SrTiO3-based ceramics. It was found thatsamples with10mol%MgTiO3and4mol%CaZrO3doped being sintered at1300oChad the dielectric properties: εr=302.54, tanδ=0.00032, Eb=28.96kV/mm; sampleswith10mol%MgTiO3and2mol%CaZrO3doped being sintered at1300oC had thedielectric properties: εr=308.74, tanδ=0.00024, Eb=26.65kV/mm.2. The effect of BaTiO3doped on crystalline structures, microstructures andproperties of SrTiO3system was discussed. The relationship between themicrostructure and dielectric performance was investigated.3. BaCuB2O5was chosen as a sintering aid for multi-ions doped SrTiO3systemto lower the sintering temperature. The effect of different adding amount ofBaCuB2O5was discussed from several aspects such as crystalline structures,microstructures and dielectric performance. The study found that samples with1mol%BaCuB2O5doped being sintered at1075oC had the optimal dielectric performance:εr=311.37, tanδ=0.00321, Eb=28.78kV/mm, Ud=1.05J/cm3, η=98.83%.4. Trivalent rare earth ions Er3+was chosen to be doped in SrTiO3systemcorresponding to the Sr2+ion vacancies compensation mechanism. The crystalline structures, microstructures, electrical conductivity, and dielectric performance ofErxSr1-3x/2TiO3system with different sintering temperature were discussed. It wasfounded that, samples with2mol%Er doped being sintered at1325oC had the optimaldielectric properties: εr=1064.22, tanδ=0.02221, Eb=8.01kV/mm.