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Graphene Prepared By PECVD With Low Temperature And Its Application Exploration Research

Posted on:2015-04-25Degree:MasterType:Thesis
Country:ChinaCandidate:H C LuFull Text:PDF
GTID:2181330467458208Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
Graphene is the first two-dimensional material which is prepared in the world,and it appears to break the theory that two-dimensional material does not actuallyexist. From then the graphene caused wide attention of the scientists in the world. Onpreparation of graphene, the current main methods are: micro mechanical exfoliation,epitaxial growth method, oxidation-reduction method and chemical vapor depositionmethod. These methods have different advantages and disadvantages. In this articlewe use the achievements of the researchers in graphene as a theoretical basis, andstudy the PECVD method for the preparation of graphene, and study the properties ofVOX-RRAM embedded by graphene.According to the survey, we found that except that the mechanical exfoliationmethod and chemical method to prepare graphene does not need high-temperatureconditions, CVD and epitaxial method prepared graphene requires very hightemperatures(1000~1450℃). In order to reduce the temperature required for thepreparation of graphene, we use the PECVD equipment for the preparation ofgraphene. Through the improving process conditions of PECVD to prepare graphenetechnology, the transfer of graphene by FeCl3etching copper foil. Through explorethe process, we can produce high quality graphene at low temperature(650℃) and lowpressure.Embed graphene to VOX-RRAM, use the magnetron sputtering prepared thebottom electrode and VOX, electron beam evaporation device was used to fabricatingtop electrodes. Graphene characterization main included the Raman spectrometer(Raman), scanning electron microscopy (SEM) and atomic force microscopy (AFM),and using a semiconductor parameter analyzer to analyze the performance ofVOX-RRAM embedded by graphene.Through the Raman spectrum analyzer for characteristic graphene, the ID/IGRaman peak at low temperature prepared graphene can be below20%,and we got ahigher quality of graphene under the condition of low temperature preparation.Semiconductor parameter analyzer tests the electrical properties of grapheneembedded VOX-RRAM samples, and the results show that the embedded grapheneVOX-RRAM significantly lower the power consumption of90%, and the consistencyof its high resistance state is also improved. This paper uses the PECVD method forpreparation of graphene, and the apply graphene to RRAM, which has a certainguiding significance for graphene growth method and its application.
Keywords/Search Tags:Graphene, Two-dimensional Material, low-temperature, PECVD, RRAM
PDF Full Text Request
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