Study On Structure And Properties Of Cu₃N And Cuwxny Thin Films

At present, more and more people pay attention to explore the properties of CU3N thin films, which is attributed to its special structure, low-temperature thermal decomposition, electrical properties, optical properties and etc. This material is used primarily in different technological fields, such as optical storage medium, electronic components, high speed integrated circuits and etc. In the present work, the mid-frequency magnetron sputtering technology was employed to prepare CU3N and CuWxNy thin films. In the experiment, the targets were high purity copper target and copper-tungsten alloy target. The sputtering gas was nitrogen and argon. The prepared films were treated by vacuum annealing. The samples were investigated by XRD, XPS, AFM, Step Tester to obtain the impacts of bias voltage and proportion of nitrogen on surface morphological, crystal structures, adhesion strength, corrosion-resistance of films. The prepared films were treated by vacuum annealing at different temperature to research the thermostability of G13N and CuWxNy thin films. The experiment results are as follows:(1) CU3N thin films grown preferentially along the (100) crystal orientation. The result of XPS was found to correspond to the result of XRD. The increase of pulsed bias leaded to a decrease in surface roughness, resistivity and a rise in deposition rate and hardness. The adhesion strength and corrosion resistance of CU3N thin films deposited on T2copper was higher than deposited on Al ally or Zn ally, and the adhesion strength increased with the increase of pulsed bias. The corrosion resistance of G13N thin films deposited on T2copper was improved with increase of deposition time and it was strengthened and then weakened with the increasing of pulsed bias. The prepared films were treated by vacuum annealing. The result of XRD indicated the degree of recrystallization was increased with the increase of annealing temperature. The CU3N thin films didn’t decompose until the annealing temperature reached600癈, which could illustrate thermostability of O13N thin films we prepared was superior to others’.(2) The result of XPS indicated content of nitrogen in the CuWxNy thin films was far less than CU3N thin films. The deposition rate of CuWxNy thin films was not high and first increased and then decreased with the increase of proportion of nitrogen. The films deposited at low proportion of nitrogen had a smoother surface. As the increase of proportion of nitrogen, the adhesion strength of CuWxNy thin films deposited on T2copper increased gradually. CuWxNy thin films deposited at different proportion of nitrogen were stable amorphous structure detected by XRD. The amorphous structure was not changed by vacuum annealing. When the annealing temperature reached600癈, the CuWxNy thin films began to decompose, Cu appeared but no W.