Boron Doned Diamond Thin Film Electrode Electrochemical Detection

A wide potential window, with boron doped diamond thin film electrode corrosionresistance, resistance to poisoning, high chemical stability, and conductivity level of higherspecial physical and electrochemical properties, so it has been widely applied inelectrochemistry and other fields. Compared with glassy carbon electrode, platinum and otherforms of solid electrode material, boron doped diamond thin film material has the advantagesof There is nothing comparable to this, therefore also received scholars around the world paymore and more attention.In this paper, the use of DC arc plasma jet CVD, through the diamond powderpretreatment silicon to sink to the bottom, the pressure is5500pa, the current power was6.7kw,950℃substrate temperatures, with H2:Ar:CH4as the input gas flow ratio of2100:1200:75after sintering, boric acid in situ boron doped conditions, deposited145minutes,prepared boron doped diamond thin film electrode. Observed by SEM film electrode surfacegrain size distribution in continuous, larger particles, resistivity Holzer test to the electrode is2.811×10-4Ω·cm, the carrier concentration is5.751×1020cm-3, data shows that theconductive properties of BDD thin film electrode has basically reached the level of theconductive metal; in the BDD electrode as working electrode in three electrode system, cyclicvoltammetry curve KCl solution0.1mol/L, potential window reaches3.6V, the backgroundcurrent is0V.This paper is divided into five parts:The first part is the introduction, mainly introduces the structure and properties ofdiamond, the electrochemical properties of two kinds of doping boron doped diamond andwide potential window and low background current, and also introduces the application ofBDD thin film electrode in electrochemical field, finally simply introduces the researchcontent and research significance.The second part is the preparation of BDD thin film electrode plasma jet CVD legalsystem, the first is the DC arc plasma jet CVD experimental equipment of the power supplycontrol system, gas circulation system, refrigeration system, mechanical pumping system,roots pump system, control system and the deposition chamber seven systems are described,and then the operation steps during the experiment this paper introduces briefly the, finally,non equilibrium thermodynamic coupling model and chemical reaction kinetic model of DCarc plasma jet deposition of CVD illustrates the principle.The third part is to introduce the BDD thin film electrode characterization andpreparation, the film in the process of experiment electrodes of SEM, Raman, XRDcharacterization and electrochemical workstation three electrode system to do a simple introduction, then do the SEM, Raman, XRD characterization and potential window andHolzer measure on the final BDD electrode are described.The fourth part is the introduction of BDD thin film electrode electrochemical detection,firstly introduces some applications of BDD electrodes in the electrochemical aspects, andthen use its influence to cadmium ion, uric acid and ascorbic acid on the modified electrodepreparation and comparative, scan rate and the oxidation peak current of the linearrelationship, different concentrations of the solution to be measured and the oxidation peakcurrent of the linear the relationship between pH value, for the testing and detectinginterference when measured from several aspects such as electrochemical detection.The fifth part of the paper is summarized and prospects for the future of the BDD thinfilm electrode.