Preparation Of One-Dimensional Superstructure Nanomaterials By Electrodeposition Into Porous Anodic Alumina Template

One-dimensional (1D) nanostructure materials have been the focus of intensive research because of its unique physical and chemical properties as well as its potential applications in many fields such as mesoscopic physics and preparation of nanoscale devices. Exploring and developing the effective method for preparing1D nanomaterials is an important foundation for1D nanomaterials field.Research shows that the performance of nanomaterials depend on the shape and the size of material microstructure strongly, thus, it has great research significance toachieve design synthesis of1D nanometerials with controlled morphology, size, structure and distribution. In this paper, In-Te nanowires with porous structure and Bi/Sb nanowire arrays with superlattice structure have been prepared by pulse electrochemical deposition inside the pores of porous anodic alumina (PAA) template. The morphology, structure, composition and phase of nanowire arrays have been characterized by SEM, TEM, EDS and XRD. The electrical properties of the nanowires were tested by the four point probe resistance tester.The PAA templates used in the experiment were synthesized by a two-step anodic oxidation approach in oxalic acid electrolyte solution at the constant voltage of40V. The PAA template have uniform pore size, straight and orderly nanochannel with diameter of about50nm.Indium-tellurium(In-Te)1D porous nanowire arrays have been prepared successfully by PAA template pulsed electrodeposition method. The morphology, structure and composition of the nanowire arrays have been characterized. The result show that the diameter of In-Te porous nanowire is about50nm, the nanowire arrays are highly ordered and exhibit a well-crystallized1D structure and presenta porous structure. Electrochemical workstation has been used to study the growth process of the nanowires. By changing the pulse deposition time, the pore structure of the nanowires can be controlled. The I-V curve shows that the In-Te porous nanowire arrays have a good metal-semiconductor schottky junction performance.The Bi/Sb superlattice nanowires have been fabricated by PAA template-pulsed electrodeposition method. The surface of the nanowires prepared in ethylene glycol and ethanol solvent is smooth, dense continuous. The results show that the Bi is amorphous phase and Sb is crystal structure. The structure of the nanowire arrays have been controlled by changing deposition time. Ⅰ-Ⅴ curve results show that the Bi/Sb superlattice nanowire arrays have rectifying characteristic. The nanowire arrays were annealed under250℃and400℃, respectively, the results show that the crystallization of the nanowire arrays was enhanced with increasing heattreatment temperature.The Ⅰ-Ⅴ curves of nanowire arrays annealed at this two kinds of temperature is same almostly, and show better characteristics of rectifying.