The Study Of Electrochemical Performance Of Passivation Film On Austenite And Ferrite Stainless Steel Under The Action Of Light Waves And Ultrasonic

At present,Characteristic of corrosion resistance of stainless steel is mainlyapplied and searched. Corrosion resistance mainly rely on a thin layer of oxidefilm on passivation film of stainless steel surface (generally less than10nm),While passive films of stainless steel have semiconductor electronic structurecharacteristics, But application and research is little in this area and needs to befurther explored, Now the photoelectric effect of oxide thin-film andphotoelectrochemical properties of light film have been availably researchedunder light.for instance,Vanadium Oxide thin films under visible lightirradiation showed the photoelectric effect, and the study on effect of ultrasoniccavitation on semiconductor characteristics of passivation film, but because ofthermal effect of ultrasonic cavitation process, This temperature will also affectits electrical properties, Whether it is light or ultrasound, or temperature thermal energy, They are different forms of energy, so the study of mechanism ofsemiconductor characteristics on passive films of stainless steel are profound, Italso is of great significance to expand the scope of application of passive filmsof stainless steel, and discovery of new sound-absorbing materials andphotovoltaic materials.This paper is based on principle of corrosion electrochemical andsemiconductor theory， mainly uses potentiodynamic polarization curves,electrochemical impedance spectroscopy (EIS) and capacitive potentiometricmethod (Mott-Schottky) and other electrochemical methods, and is studyingcorrosion resistance and semiconductor properties of passivation film ofSUS304austenitic stainless stee and SUS430ferritic stainless steel underultrasonic and light condition, Finally investigated the effect of temperature onthe properties of both types of passive films of stainless steel. Through a seriesof experiments,we can draw the following conclusions:(1) Compared with the dark state, surfaces of passivation film of SUS304austenitic stainless steel and SUS430ferritic stainless steel aggravatecorrosion In light conditions, and light-corrosion-resistance decrease, butSUS304austenitic stainless steel is showed better illumination corrosionresistance than SUS430ferritic stainless steels, The essential reason of thesurvey is that Light waves make both passive film of stainless steel formed in neutral aqueous solution the nature of electronic distribution, because of passivefilms of stainless steel suitable absorption of light and the photoelectric effect acorresponding opto-jump prompted carrier distribution, This understanding alsoprovides theory of the future discovery of new photovoltaic materials withcorrosion resistance.(2) Under function of ultrasonic wave, making passivating film forming in3.5%Nacl,1mol/L HCL,3%KOH solution different systems,SUS304Austenitestainless steel and SUS430ferritic stainless steel cavitation corrosion issignificant, and cavitation corrosion resistance decrease. Also SUS304austeniticstainless steel show better resistance to cavitation than SUS430ferritic stainlesssteels. The essential mechanism of this phenomenon is that under the influenceof the ultrasonic, electron distribution within the membrane structure haschanged. the passive films of stainless steel absorute suitable ultrasound,makingthe appropriate sound and electronic transition and redistribution of carriers,Also this research to see has opened up new avenues for finding new corrosionresistance of sound absorbing material.(3) Under the experimental temperature range20~80℃, the passivationfilm of SUS304Austenite stainless steel and SUS430ferritic stainless steelformed in a1mol/L solution of NaHCO3exacerbate by corrosive with the rise oftemperature, but SUS304be able to bear corrosion bast than SUS430. under theaction of temperature as heat, electronic of passivation film absorutporper heat and jump. the Fermi energy of electronic structure of semiconductors of passivefilm moving make energy level difference reduce,and the final cause isincreasing of concentration of point defects of oxygen vacancy. donor carrier isof concentration.