Doped ZrO <sub> 2 </ Sub> Functional Films And Its Nature

This thesis includes the following two aspects:(1) The Si-ZrO2 composite films were prepared by using the megnetron co-sputtering system. Different compostion Si-ZrO2 samples were deposited by controlling the angle of Si target on p-type Si(100) substrates at room temperature. The optical properties of as-deposited and after-annealing samples were measured by a spectroscopic ellipsometry. The influence of Si concentration and anealling upon the optical constants spectrum was presented. The resistance switching characteristics of Si-doped films were investigated for nonvolatile memory. With slightly Si-doped, the Al/Si-ZrO2/Al device presents reliable reproducible switching behaviors. With the Si concentration of composite films increasing, the set voltage (high resistence state switches to low resistence state) and on/off ration of two stable states increase due to the enhancement of sample's resistivity. The on/off ratio of two stable states was above 108, much larger than Al/ZrO2/A1 device which presented. It provides better error tolerance for nonvolatile memory.(2) Different oxidation degree of ZrOx films deposited with different oxygen flux by megnetron co-sputtering system was investigated using X-ray diffraction, X-ray photoelctron spetroscopy, and spectroscopic ellipsomery. Various defects with the fomation of interstitial oxygen and oxygen vacancies existed in monoclinic ZrOx films. Parameters were extracted from SE measurement based on Lorentz oscillator model to fit the SE data. The corresponding MIM device shows reliable reproducible switching behaviors. The device which adopted less-oxidation film presented the lower yield rate and lower endurance than the more-oxidation one because the less-oxidation film has more oxygen vacancies and is more difficult to capture enough oxygen ions from the A1OX layer established between ZrOx and Al to reach the high resistence state (HRS). The difference among three different-oxidation ZrOx film device implied the possible conducting mechanism.