Semiconductor Superlattice Subband Optical Transition Between The Absorption Of The Theoretical Research

Semiconductor superlattice and quantum well have become one of the forefront research topics in condensed matter physics in recent years. Comparising with bulk materials, semiconductor superlattice and quantum well have received increasing interests due to a great deal of novel and potical marvelous physical properties observed, and prospective and potential applications. In this thesis, we present some detailed theory on electronic energy level structure and Intersubband absorption in semconductor superlattice' s with periodic structural. The main results of this thesis are summarized as follows:1, we investigated the electronic energy level structure of the bound state in GaAs/Al_xGa_1-x, supperlattice based on the general formalism of the Kronig-Penny model. The optical transition frequency, the bandwidth and transition moment as a function of the quantum well width, the barrier width and the composition percent of A1 are obtained. In addition, the relation between energy and the wave vector is given and discussed. Our calculated results show that the most important factor that impacts the optical transition frequency is the width of well . The wider the well is, the smaller the optical transition frequency is. The main factor that affect the bandwidth is the width of barrier. The wider the well (the barrier) is, the smaller the well and bandwidth is. The second subband is affected more distinctly than the first subband by the wave vector.2, we investigated the electronic energy level structure of the extended state in GaAs/A_xGa_1-x supperlattice based on the general formalism of the Kronig-Penny model. The optical transition frequency and the bandwidth as a function of the quantum well width , the barrier width and the composition percent of Al are obtained. In addition, the relation between energy of...