Numerical Simulation Of The Low-temperature Plasma Discharge

Industrial applications of low temperature plasma technologies have developed rapidly during recent years. In particular, plasma etching and film are ever-increasing role in the manufacture of semiconductor playing devices. However, we still suffering from several problems, including difficulties in plasma processes, such as lack the effect control and adjustment method. Because the influence of several kinds of particals and electromagnetic field. For the understanding of the complex physical behaviour to find a research method in industrial applications, several achievements are listed as the followings:1. Search data and literatures of domestic and abroad to find an acceptable method.2. The expressions of the fluid model to imitate the process of low-pressure discharges are discussed with numerical calculations.3.The imitations of the process of low-pressure discharges are presented, contain the analyse of parameters(such as plasma density,the space distribution of electron temperature and so on) of radio-frequency(rf) inductively coupled discharges and capacitively coupled discharge in difference structure and pressure. It provides a theory method in plasma empirical analysis and industrial applications. In this process, we can find suited parameters to control and increase efficiency and quantity.