In-situ Reaction Based On Elemental Copper And Silver For-metal Selenides Nanocrystals: Room Temperature Synthesis, Characrerization, And Photoelectric Properties

At present a various of synthetic methods have been developed and got kinds of novel materials which have been used in the production and living. Among them, Cu-based and Ag-based chalcogenide semiconductor material which display excellent performance have been widely used in catalytic, optical, electrochemical fields. While, majority of synthetic methods for Cu-based chalcogenide semiconductor material especially for copper selenide require high temperature and high pressure, expensive raw materials, toxic agent, or complicated preparation technology which confine the application in energy conversion, environmental protection, and energy storage. In this paper, a simple, environment friendly and mild way has been designed to achieve the controlled synthesis of Cu-based and Ag-based selenide semiconductor material nanomaterials. By changing the reaction condition to turn the performace of the desired production, provide a new effective synthetic method for controlling composition and morphology of resultant. Here, the synthesis of Cu-based and Ag-based selenide and their photoelectric property will be investigated as follows:(1) In this part of work, the ternary Cu-based selenide semiconductor materials were obtained by one pot in-situ growth method at room temperature(5~30℃). copper powder, copper foil, and copper film DC magnetron sputtered on conductive glass are adopted as copper source, sodium sulphide is used as sulphur sources, and selenium powder is used as selenium source. The morphology of resultant depends on the change of copper source, when the copper powder is used as copper source particles with secondary structure can be synthesized, when copper foil is used as copper source flower-like resultant can be synthesized, and copper film DC magnetron sputtered on conductive glass as copper source can get petaloid resultant. And studied the formation of Cu7.2S2Se2 by changing quantity of selenium powder, reaction temperature and reaction time. The resultant can be controlled via changing quantity of selenium powder and got the suitable reaction temperature and time for the synthesis of Cu7.2S2Se2.(2) In order to learn the effect of silicon slice substrate on the formation of Ag2 Se film. In the work about Ag2 Se, kinds of silicon are used as slice and silver film DC magnetron sputtered on silicon slice is used as silver source and selenium powder is used as selenium source obtained the Ag2 Se by one pot in-situ growth method at about room temperature(5~35℃).(3) When the Kufil alloy was obtained as copper and silver source, the flake porous structure Cu0.5Ag1.5Se can be synthesized by the one pot in-situ growth method at about room temperature(5~25℃). In the work, sodium sulphide is used as sulphur sources, and selenium powder is used as selenium source, respectively.The study about the formation of Cu0.5Ag1.5Se was carried out by changing quantity of selenium powder, reaction temperature and time. The composition and morphology of resultant can be controlled by changing reaction conditions and get the suitable reaction temperature and time for the synthesis of Cu0.5Ag1.5Se.