Preparation Of Zno Nanowire Arrays In The Dssc Cell

Dye-sensitized nanocrystalline solar cell is a new type of photoelectric chemical solar cell, which has become an arresting point of academy in the world due to its qualities such as simpleness of preparation, low cost, large potential for improvement considering the theoretical photoelectric conversion efficiency and friendly environment action. At present, the photoconversion efficiency of DSSCs with TiO2 thin film photoanodes had the best performance of 11%, but it is precisely because the existence of a large number of surface states in porous nanocrystalline TiO2 thin films, the conversion efficiency of DSSCs decline. ZnO as the one to replace TiO2, in recent years, the research in ZnO nanowires, rods and films have made great development. In these cells the introduction of linear electron transfer theory thought of that E-perpendicular has a very high transmission rate and the minimum loss in the conductive substrate with crystal arrays structure. Under the same conditions, the photoconversion efficiency of DSSCs with well-aligned ZnO nanowire arrays photoanodes performance better compared with the TiO2 nanoparticles. Therefore, in electronic transmission the introduction of single-crystal structure semiconductor with nanowire arrays can effectively reduce the grain boundary barrier and the transmission loss, so to improve the capacity of charge transmission and enhance the photoconversion efficiency, for that it has become a new research direction in dye-sensitized cell photoanodes.In this paper, the preparation craft of ZnO nanowires which were applied for DSSCs was investigated, well-aligned ZnO nanowire arrays were synthesized under optimize craft, and then it was introduced to apply for the DSSCs's photoanodes,the primary results are shown as follow:(1)The ZnO nanowire arrays were synthesized via chemical vapor deposition (CVD) method,the preparation craft parameters such as substrate, catalyst, temperature and the Argon gas were found to greatly affect the ZnO nanowire arrays. The results by materials microstructure show that it is the optimize craft of the ZnO nanowire arrays: Al-doped ZnO transparent conductive films (AZO) was selected to use for the substrate, Chromium was chosen for catalyst, when the highest reaction temperature of source came to 1350℃, the highest substrate temperature maintained about 450℃-500℃, and the Argon gas flow rate was 35 sccm,40 minutes later,the reaction temperature of source began to drop to 1100℃,in the process, the growth time of ZnO nanowires maintained for 1 hour.(2)Based on this DSSCs with the ZnO nanowire arrays Photoanodes which were synthesized under optimize craft, the open circuit voltage of 350mV, short circuit 0.68mA/cm2, fill factor of 38.2% and the total efficiency of 0.078% were obtained.