Study On Optical Properties Of NiO Thin Films Prepared By Sol-Gel

NiO is a p-type semiconductor material with typical 3d electron structure oxide. Its band gap is between 3.6-4.0 eV. Because NiO thin films have excellent optical and electrical properties, it is widely used in many fields, such as UV-detector, electrochromic display,electrodes and electrochemical capacitors.There are several methods to prepare nickel oxide films, which include magnetron sputtering, chemical vapor deposition, molecular beam epitaxy, pulsed laser deposition, etc. For above methods, the equipment is expensive, technology is complex and it is not easy to prepare the large area of thin films. At present, the sol-gel method that is low cost, simple process and components uniform, so it is suitable for the preparation of multi-element doped film.In this thesis, NiO thin films were deposited by the sol-gel method at different concentrations of solution and temperature. In order to adjust the band gap of NiO thin films and make the thin film can be applied to the UV-detector fields extensively, the Mg-doped NiO thin films were prepared. The structure, optical characters, and surface morphology of the thin films were investigated by X-ray diffraction(XRD), UV-VIS spectrophotometer and atomic force microscopy(AFM).