| In this paper, organic molecules and an oligomer with hydrazine structure weresynthesis, in which different aromatic ring as electron-withdrawing group. The structuresof the compounds were characterized by1HNMR, MS, IR and other measurements. Thenonlinear optical properties and electrical storage performance were studied. The thesisincluding the following three parts:(1) Hydrazone1-4with push-pull electronic structure were synthesized, in whichnaphthalimide as electron withdrawing groups and different aromatic ring for theelectron-withdrawing group. UV absorption and fluorescence emission spectra weredetected for compounds1-4. The nonlinear absorption properties of1-4were studied at532nm and800nm. The results show that these naphthalimide molecules behavebroad-band nonlinear optical properties; planarity and the electron-withdrawing groupshave a significant impact on the nonlinear optical properties. Meanwhile, electrical storageperformance was studied for1and2. Due to different packing distance caused by thedifferent conjugation, compounds1and2show different storage types. Molecular1showdynamic random access memory (DRAM) storage type, molecule2show write once andread many times (WORM) storage characteristics.(2) Based on structure-property relationship, multi-branched molecules5-7weresynthesized in which triphenylamine as the electron-withdrawing groups. The results showthat strong electron donor group benefit for nonlinear optical properties. Increasing theelectronic donor ability, compounds8-10were designed based on the structure ofsingle-arm molecular. From the results, effective intramolecular charge transfer has asignificant impact on the nonlinear optical properties.(3) Polymer P with hydrazone structure was synthesized, the polymer behave goodsolubility and strong fluorescence. Meanwhile, P show good nonlinear optical properties at532nm and800nm. This indicates that this polymer can be a potential nonlinear opticalmaterial. The UV absorption of spin-coated polymer film was measured. Its "ITO/ polymer P/Al device show stability performance for the of dynamic random accessmemory. |