The Synthesis And Electro-optical Properties Of One-dimensional In-Al Codoped ZnO Nanostructures

Nowadays more and more people develop an interest of nano-materials producing and semiconductor nano-materials seems particularly outstanding. In numerous nanomaterials, ZnO strongly attracts people’s attention to other unique features and possesses an irreplaceable position, especially the broadband gap is3.37eV in room temperature, excitons bound to high (60meV) threshold voltage and lower electronic guide to living the defects. Compared with the pure ZnO, Al doped ZnO of near infrared wavelengths in the visible and the scope of the higher electrical conductivity and no loss of light transmission properties. Therefore, doped ZnO Al more suitable for transparent conductive material, and In order to make ZnO nano semiconductor material in the semiconductor nano electronic and equipment can be more widely used, can be In ZnO through right amount In doping to improve electronic transport properties, based on the above two reasons we through the choice In-Al codoped ZnO, to increase the concentration of carriers and adjustment band gap.This article take the chemical vapor deposition (CVD) method for the synthesis of In-Al codoped ZnO nanowires and nanobunches of quasi one-dimensional structure, and to characterization the morphology, structure and composition by canning electron microscopy (SEM), energy spectrum analysis (EDX) and X-ray diffraction (XRD). Through the XRD,it is very clear to see that only have one typical ZnO hexagonal fine zinc mine structure of the diffraction peak. It can be analyzed from EDX energy spectrum that these nanometer serials are composed of Zn, O, Al and In. It is also shows that In and Al have successfully doped into ZnO crystal.It take easier way (microgate template technology) to product one dimension In-Al codoped ZnO nanostructures microelectrode. As the schottky contact, Au form electrode material and assemble the photoelectric detector. By using the laser as excitation source, and study the mechanism of photoconduction with In-Al codoped ZnO nanowires and nanobunches, including dark environment and ultraviolet irradiation volt-ampere characteristic, photoelectric response rate and photoelectric response time.The experiment shows that the device can be used for photoelectric detection, and that the nanobunches of detector is possible response time is less than0.5s, recession time is about23s. Nanowires the optical probe the response time is0.5s, recession time is about33s.